IXFK64N50P

Vgs(th) (Max) @ Id:	5.5V @ 8mA
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264AA (IXFK)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	830W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8700pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	150nC @ 10V
Series:	HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs:	85 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	64A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFK64N50P Application Field and Working Principle

The IXFK64N50P is a type of Field Effect Transistor (FET) and is also referred to as an Insulated Gate Bipolar Transistor (IGBT). It is a single-channel device that has a voltage drop of 0.1 volts and a maximum current of 40A. It is designed for use in high-power, high-usage applications, such as power supplies, UPS systems, motor control, and motor drives. This type of transistor is typically found in industrial, energy-intensive applications.The basic structure of the IXFK64N50P consists of three terminals: the source, gate, and drain. The source and drain are both N-type semiconductor regions while the gate is insulated by an oxide layer. The gate terminal is the control element which is responsible for controlling the flow of current between the source and drain. The physical structure is such that when a voltage is applied to the gate terminal, it creates a field of electrons known as a depletion region, which acts as an electric barrier. By changing the voltage applied to the gate, the barrier can be regulated or even eliminated, allowing current to flow from the source to the drain.The IXFK64N50P can operate in two different modes: the linear mode and the saturation mode. In linear mode, the voltage on the gate will control the resistance of the transistor and the current flowing through it. When the voltage applied to the gate is higher than the threshold value, the transistor is said to be turned on, or saturated, and no further current can flow from the source to the drain. The saturation mode of operation is most commonly used in switching applications, such as motor control, where a large amount of current is to be switched off and on quickly.The IXFK64N50P operates with a voltage range of 20V to 100V and a current range of 0.2A to 40A. It also has a high switching speed of between 5nS and 3nS. This makes the transistor ideal for applications where a large amount of power needs to be controlled quickly. The IXFK64N50P also features low gate charge, low on-state resistance, and low leakage, making it an efficient and reliable device.Overall, the IXFK64N50P is a type of Field Effect Transistor (FET) designed for high-power, high-usage applications such as power supplies, UPS systems, motor control, and motor drives. It features a voltage range of 20V to 100V and a current range of 0.2A to 40A, with a high switching speeds of 5nS to 3nS. This makes it an efficient and reliable device for handling large loads and controlling them quickly. Thanks to its structure, the IXFK64N50P can operate in two distinct modes, linear and saturation, allowing it to be used in a wide variety of applications.

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