IXFK21N100F

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IXFK21N100F is a Field Effect Transistor (FET) with a maximum drain current of 21A. This FET is specifically designed for use in linear motor control and automotive motor applications. It has a low on-resistance of 1.05 ohms, making it a great choice for applications where switching losses are critical.

A FET is made up of two p-n junctions between an input voltage (gate) and a source and drain. The gate voltage sets the voltage on the FET, controlling the current flow between the source and drain. These have been used in electronic switches and amplifiers since the 1970’s and have replaced the traditional bipolar junction transistors (BJTs) and other junction-type transistors.

The IXFK21N100F is a metal oxide semiconductor field effect transistor (MOSFET). It is a single-component FET and is a voltage-controlled, unipolar semiconductor device. It is composed of metal and oxide regions that form a structure where the gate contact is separated from the source-drain channels. This structure eliminates the need for a gate-source insulation layer, allowing the gate to have a higher voltage level with respect to the source. The MOSFET has a gate capacitance due to the insulating layer of the oxide and this is an important factor in choosing the FET.

The IXFK21N100F is a modern version of the MOSFET and is capable of switching high-power levels for motor control applications. It is rated for operation up to 700V, making it a great choice for automotive motor control and high-voltage industrial loads applications. It has a wide range of features including a high maximum drain current, low on-resistance, low power dissipation and a wide operating temperature range.

In motor control applications, the IXFK21N100F is used as a switch controlled by the input voltage applied to the gate. When the input voltage is above a certain value, the MOSFET turns on and draws current from the supply. This current is then used to turn the motor shaft, or other load. This can be used to control the speed or direction of the motor depending on the circuit design.

The IXFK21N100F is also used in switching circuits and amplifiers. Its low on-resistance and high drain current make it an ideal choice for applications that require fast switching time and lower switching losses. The wide range of operating temperatures and low power dissipation make it a suitable choice for applications in temperature sensitive environments.

In conclusion, the IXFK21N100F is an excellent FET for motor control and switching applications. Its low on-resistance and high drain current make it an ideal choice for motor control applications, while its wide range of operating temperatures and low power dissipation make it suitable for switching and amplifying applications. Its modern construction makes it a great choice for those looking for the latest and most reliable FETs for their projects.

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