IXTA02N250

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (IXTA)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	116pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	7.4nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	450 Ohm @ 50mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	200mA (Tc)
Drain to Source Voltage (Vdss):	2500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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<p>IXTA02N250 is a type of single-feature field-effective transistor(FET) designed for use in frequencies below 3GHz, and as such are commonly used in a wide range of RF applications including satellites, automotive and consumer electronics. The IXTA02N250 devices come in a wide variety of packages, making them suitable for both consumer (in devices like cellphones and GPS systems) and commercial applications (in devices such as cell base station and Wi-Fi routers).</p><p>The IXTA02N250 is an enhancement-mode FET with an N-channel. As it is a depletion-mode device, the gate of the device needs to be connected to a DC voltage source in order for the device to turn on. Once the gate voltage reaches the threshold voltage of the device, current begins to flow along the N-channel and the FET is considered active. The IXTA02N250 device is designed to operate in the linear mode, meaning that the device can be used in applications where it is necessary to modulate the current or voltage.</p><p>The IXTA02N250 has a maximum drain current rating of 2A, and a drain-source voltage rating of 250V. This makes it well suited to applications such as power-supply switching or high-frequency communications, where low on-resistance and fast switching times are at a premium. The IXTA02N250 is also highly noise resistant, with a max noise figure of -35 dB. This makes it ideal for noise-sensitive applications, such as those found in medical equipment and automobiles.</p><p>The IXTA02N250 comes in a variety of package types, including Flatpack, Small Outline surface-mount, and Connector mount packages. The size and package type of the device make it ideally suited for use in applications requiring surface mounting, such as in automotive applications or in communications equipment.</p><p>In summary, the IXTA02N250 is a high-performance FET with an N-channel construction and a maximum drain current rating of 2A. With its wide range of package types, it is suitable for a variety of commercial and consumer applications, including power-supply switching, high-frequency communications, vehicle electronics, and medical equipment. Thanks to its low on-resistance and fast switching times, as well as its noise immunity, the IXTA02N250 is an ideal choice for applications requiring high performance and reliability.</p>

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