Allicdata Part #: | IXTA08N50D2-ND |
Manufacturer Part#: |
IXTA08N50D2 |
Price: | $ 1.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 800MA D2PAK |
More Detail: | N-Channel 500V 800mA (Tc) 60W (Tc) Surface Mount T... |
DataSheet: | IXTA08N50D2 Datasheet/PDF |
Quantity: | 386 |
1 +: | $ 1.34820 |
50 +: | $ 1.08675 |
100 +: | $ 0.97808 |
500 +: | $ 0.76073 |
1000 +: | $ 0.63032 |
Specifications
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | Depletion Mode |
Input Capacitance (Ciss) (Max) @ Vds: | 312pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12.7nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.6 Ohm @ 400mA, 0V |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Current - Continuous Drain (Id) @ 25°C: | 800mA (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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IXTA08N50D2 is a type of single metal-oxide-semiconductor field-effect transistor (MOSFET). MOSFETs are widely used in electronic equipment due to their low power consumption and fast switching speeds, making them a versatile and cost-effective device. IXTA08N50D2s are particularly favored in portable and handheld applications due to their small size and reduced weight.
MOSFETs are three-terminal devices used as electronic switches and amplifiers. In basic terms, they control the flow of electrons between the two main terminals (source and drain) by means of a Dielectric or electrical field created by the gate terminal. IXTA08N50D2 operates by the Electrostatic Field Effect, where the gate voltage controls the current flowing between the source and drain.
IXTA08N50D2 features an Source-Drain breakdown voltage of 500 V, RDS (ON) of 3.2 mOhm and a maximum drain current of 8 A. It also provides excellent thermal characteristics and a maximum temperature rating of 150°C. Due to its low RDS (ON) and improved power capability, IXTA08N50D2 is an ideal candidate for applications such as motor controllers, solar panel controllers, USB power supplies, and AC-DC adaptors.
The IXTA08N50D2 is developed under a variety of conditions, making it well-suited for both high-side and low-side switching in either linear or switching applications. This makes it a great choice for both commercial and industrial applications. Moreover, its low Ron, high-frequency operation and excellent thermal characteristics also make it suitable for high-speed switching applications, such as in DC/DC converters, inverters, and drivers.
The IXTA08N50D2 is also particularly useful for low-side switching and low-frequency operation, due to its low Ron and minimal switching losses. This makes it an ideal candidate for AC/DC converters. Additionally, its low capacitance allows for a low output noise and its low gate charge make it suitable for a variety of high-efficiency, high-speed switching applications.
The working principle of IXTA08N50D2 is quite simple. To operate the MOSFET, a Positive Gate Voltage is applied. This causes a current to flow between the source and drain terminals. The voltage and the current can be adjusted by altering the gate voltage. Additionally, the IXTA08N50D2 can be used to reduce the voltage or current flowing between the two main terminals.
In conclusion, the IXTA08N50D2 is an excellent choice for a variety of applications, due to its low power consumption, fast switching speeds, and small size. Its versatility, ease of use, and excellent thermal characteristics also make it suitable for a wide range of applications, including motor controllers, solar panel controllers, USB power supplies, AC-DC adaptors, DC/DC converters, inverters, and drivers.
The specific data is subject to PDF, and the above content is for reference
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