| Allicdata Part #: | IXTA76P10T-ND |
| Manufacturer Part#: |
IXTA76P10T |
| Price: | $ 3.91 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 100V 76A TO-263 |
| More Detail: | P-Channel 100V 76A (Tc) 298W (Tc) Surface Mount TO... |
| DataSheet: | IXTA76P10T Datasheet/PDF |
| Quantity: | 595 |
| 1 +: | $ 3.55320 |
| 50 +: | $ 2.85277 |
| 100 +: | $ 2.59913 |
| 500 +: | $ 2.10468 |
| 1000 +: | $ 1.77502 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 298W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 13700pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 197nC @ 10V |
| Series: | TrenchP™ |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTA76P10T is a field effect transistor (FET) designed for use in digital switching and power amplifier circuits. It is a depletion-type MOSFET, meaning that it can be turned on and off by adjusting the input voltage. When the input voltage is raised beyond a certain threshold, the FET is "on" and let electrons pass through it. Conversely, when the voltage is lowered below the threshold, the FET is "off" and no electrons can flow.
The IXTA76P10T is a single-die device, meaning that all components have been integrated onto a single chip. It can operate at a wide temperature range (from -55°C to +175°C), meaning it can be used in applications where reliability is key. It also features low power consumption and high speed, allowing it to be used in high speed devices such as computers.
The IXTA76P10T is well suited for digital switching applications where low power consumption and high frequencies are important. It can be used to switch signals with low delay times and low power consumption. It is also useful for power amplifiers, where it can be used to control large amounts of current with high efficiency. In addition, it is suitable for use in drives and logic circuits where features such as fast switching and low power operation are required.
The IXTA76P10T is highly versatile and can be used in a variety of applications. It is commonly used in industrial and medical applications, such as process control systems, automotive systems, medical and medical instrumentation, and telecommunications systems. It is also used in consumer applications, such as DVDs, cell phones, and computer peripherals.
The working principle of an FET is simple. The device consists of an insulated gate, surrounded by three terminals. The "source" and "drain" are connected to an external power supply, while the "gate" is maintained at a lower potential. By varying the voltage applied to the gate, the current passing through the device can be controlled. When a voltage higher than the FET\'s threshold voltage is applied to the gate, the FET enters a conducting mode and the current passing through the device increases. Conversely, when the voltage applied to the gate is lower than the FET\'s threshold voltage, the device is off and no current can flow.
The IXTA76P10T is a useful device for a variety of applications due to its low power consumption, high speed, and wide temperature range. It is a versatile tool that can be used in digital switching and power amplifier circuits, medical and medical instrumentation, industrial process control systems, automotive systems, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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IXTA76P10T Datasheet/PDF