Allicdata Part #: | IXTA26P10T-ND |
Manufacturer Part#: |
IXTA26P10T |
Price: | $ 2.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 100V 26A TO-263 |
More Detail: | P-Channel 100V 26A (Tc) 150W (Tc) Surface Mount TO... |
DataSheet: | IXTA26P10T Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.79311 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3820pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | TrenchP™ |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTA26P10T is a type of enhancement mode Field Effect Transistor (FET) chip. It is designed to provide power amplification and control, allowing an electrical signal to interact with or switch on/off the flow of current through the platform. It is usually used in various consumer electronics and industrial applications, where switching and signal processing are required. The IXTA26P10T offers excellent power handling capability and outstanding signal quality in circuits.
Features
- Available in both Dual N-Channel and Triple N-Channel packages
- High power handling capability up to 5.8 W
- Operating voltage from 5 V to 40 V
- High switching speed of up to 1 MHz
- Wide range from -55°C to +150°C
Applications
- Automotive electronic systems
- High voltage switching applications
- High power amplifiers
- Current level sensing and control
- Telecommunication systems
Working Principle
The IXTA26P10T is an enhancement mode FET, working by controlling the flow of electrons or holes across an electrically insulated gate. When the gate voltage is set at the threshold voltage, it will allow the electrons to flow from the source to the drain, which will produce a trans-conductance between the two. Since it is a voltage-controlled device, the trans-conductance of the FET is determined by the voltage applied to the gate.
The IXTA26P10T is essentially a three terminal device, with the source (S), gate (G) and drain (D) terminals respectively. The gate electrode of the device is isolated from the source and drain by a very thin insulator layer. By applying a suitable gate voltage, the flow of Source to Drain current can be controlled.
The power handling of the IXTA26P10T is mainly due to its low on-state resistance. This is also one of the reasons these FETs are commonly used in high power switching applications, as they can operate at high current levels and offer high switching speeds.
The IXTA26P10T can also be used for other applications when used in combination with other components. It can be used as a level shift device or a current limiting device, providing better power efficiency, signal quality and improved noise immunity.
The IXTA26P10T is a versatile device that offers excellent power handling capabilities and outstanding signal quality. It is widely used in various consumer electronic devices and industrial applications, where switching and signal processing are needed. It is especially useful in applications where higher current levels and higher switching speeds are required.
The specific data is subject to PDF, and the above content is for reference
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