IXTA3N50D2 Allicdata Electronics
Allicdata Part #:

IXTA3N50D2-ND

Manufacturer Part#:

IXTA3N50D2

Price: $ 2.32
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 3A D2PAK
More Detail: N-Channel 500V 3A (Tc) 125W (Tc) Surface Mount TO-...
DataSheet: IXTA3N50D2 datasheetIXTA3N50D2 Datasheet/PDF
Quantity: 289
1 +: $ 2.11050
50 +: $ 1.69533
100 +: $ 1.54463
500 +: $ 1.25077
1000 +: $ 1.05487
Stock 289Can Ship Immediately
$ 2.32
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V
Drive Voltage (Max Rds On, Min Rds On): --
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTA3N50D2 is a power transistor belonging to the field of field effect transistors (FETs) and particularly to the family of single-signal MOSFETs. It is a component developed by IXYS, a semiconductor manufacturer from California, whose products are employed in many different industries. This transistor is a useful component in low-power applications, since its breakdown voltage is only 60 V. The types of applications of this component are numerous and range from energy conversion to power conservation.

A field effect transistor is a type of transistor that uses a voltage applied between its gate and source plates to control current flow through the channel between its source and drain. This component is able to reduce the power dissipation in a circuit by reducing the quiescent current in the circuit, while still providing high efficiency gains and fast operation. The IXTA3N50D2, in particular, is a FET composed of three terminals, called gate, drain, and source. The gate is where a potential is applied to switch the device. The drain is the current path and the source is where the current enters.

The working principle of a FET is similar to that of a regular transistor. A FET contains an insulated gate electrode, and a semiconductor channel is connected between the gate and the source. When a voltage is applied to the gate, the channel is opened and current is allowed to flow through the source and drain. This is the device’s switching action. The amount of current that passes through the channel is proportional to the gate voltage and can be controlled by the gate voltage.

The IXTA3N50D2 is typically employed in low-power applications like audio applications and motor control, thanks to its low on-resistance (5.5mΩ). It is also used in power conservation applications, such as LED lighting, home entertainment, and digital photography. The transistor is also convenient for carrying out power supply sequencers, as it has a low-power consumption, and for providing a gate drive for larger GS134 devices.

As with any transistor, the IXTA3N50D2 needs to be used with a properly designed gate driver circuit to function correctly. The gate driver supplies a smooth and sufficient gate voltage to control the current through the source-drain channel. The circuit should also be designed with adequate hardware, such as resistors, capacitors and inductors, to ensure that the transistor is stable and the current is controlled efficiently.

In summary, the IXTA3N50D2 is a single-signal MOSFET transistor developed by IXYS, which can be employed in low-power applications, such as audio applications and motor control. Its working principle is based on that of a regular transistor, using a voltage applied to the gate to control current flow through the channel. The IXTA3N50D2 is useful for power conservation applications, like LED lighting and digital photography, as well as for providing a gate drive for larger GS134 devices.

The specific data is subject to PDF, and the above content is for reference

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