| Allicdata Part #: | IXTA08N100P-ND |
| Manufacturer Part#: |
IXTA08N100P |
| Price: | $ 1.37 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 0.8A TO-263 |
| More Detail: | N-Channel 1000V 800mA (Tc) 42W (Tc) Surface Mount ... |
| DataSheet: |  IXTA08N100P Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 1.23165 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 50µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 240pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 10V |
| Series: | Polar™ |
| Rds On (Max) @ Id, Vgs: | 20 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 800mA (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The IXTA08N100P is a unique component that offers a wide range of application possibilities with its flexible design. At the same time, it offers excellent performance and reliable operation. In this article, we will explore the application field of the IXTA08N100P and explain its working principle. The IXTA08N100P is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that belongs to the “Single” family. It offers an almost limitless range of applications because it is very versatile and reliable. Its main purpose is to act as a highly efficient switch due to its low RDS(on) value and fast switching speed.The IXTA08N100P is particularly suitable for applications where low voltage, low RDS(on), low gate charge, and low input/output capacitance are required. This makes it an ideal choice for use in designs such as power converters, high-frequency amplifiers and RF communication systems. Additionally, its low capacitances and high switching power ensures successful installation in high-temperature applications of up to 175°C.One of the most remarkable applications for the IXTA08N100P is its capability to be successfully used in battery management systems, as it provides a much higher efficiency and reliability than other MOSFETs. By using this component in such applications, the overall system performance can be improved, allowing greater reliability and significantly lower power consumption.Now let’s take a look at the IXTA08N100P’s working principle. As a MOSFET, the IXTA08N100P is an electrically controlled switch. It works by creating a conducting path between its source and drain terminals when a voltage is applied to its gate terminal. When the voltage is removed, the path is broken and the MOSFET effectively becomes an open circuit.The IXTA08N100P works in accordance with the MOSFET’s principle of current flow control. In this case, the current flow is limited by the resistance of its gate terminal. The gate resistance acts as a barrier to the flow of electrons, thus limiting the amount of current that can pass through the MOSFET.The IXTA08N100P also exhibits an ideal voltage transfer characteristic. This characteristic means that the MOSFET is able to respond to small changes in applied voltage and can effectively modulate its output current in response to these changes. This makes the IXTA08N100P an ideal solution for use in high-frequency signal processing applications.In conclusion, the IXTA08N100P is a highly versatile component that offers many unique features and an excellent performance. Its low RDS(on) and fast switching times make it an ideal solution for a wide range of applications. Additionally, its excellent voltage transfer characteristics render it ideal for use in high-frequency signal processing.
The specific data is subject to PDF, and the above content is for reference
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