| Allicdata Part #: | IXTA10P50P-ND |
| Manufacturer Part#: |
IXTA10P50P |
| Price: | $ 4.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 500V 10A TO-263 |
| More Detail: | P-Channel 500V 10A (Tc) 300W (Tc) Surface Mount TO... |
| DataSheet: | IXTA10P50P Datasheet/PDF |
| Quantity: | 3252 |
| 1 +: | $ 4.13000 |
| 10 +: | $ 4.00610 |
| 100 +: | $ 3.92350 |
| 1000 +: | $ 3.84090 |
| 10000 +: | $ 3.71700 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2840pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Series: | PolarP™ |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTA10P50P is a single N-channel Power Metal-Oxide-Semiconductor Field-Effect Transistor (POWER-MOSFET) that is commonly used in power electronics applications. A major advantage of using the IXTA10P50P for applications that require high power is the fact that it can handle higher voltages and currents compared to similar devices. This capability makes it attractive for use in high-power switching and conversion applications, such as power supply regulation, motor control, and high-efficiency load switching.
A POWER-MOSFET is a type of field-effect transistor (FET) that has a unique gate structure that provides superior performance in high-power applications. Field-effect transistors have three main components: a channel, a gate, and a source. The channel is the semiconductor material that the transistor switches between on and off states. The gate is the voltage controlled device that determines the resistance of the channel. The source is the power source that supplies the electric charge necessary for the switching action to take place.
The IXTA10P50P is a vertical power MOSFET which utilizes a special structure of a P+ source, with an N- channel MOSFET, in order to provide very high static and dynamic performance. It has a maximum drain-source voltage of 100V and can support currents up to 10A. It has a low on-resistance of 0.014Ω, which ensures that less power is wasted and that switching speeds are maximized.
The IXTA10P50P works by controlling the flow of electrical charges between the source and the gate. When the gate voltage is applied, the charges flow from the source towards the gate, reducing the resistance of the channel and allowing current to flow. When the voltage is removed, the charges are removed from the gate, and the resistance of the channel increases, stopping the flow of current.
The IXTA10P50P has found numerous applications in power electronics applications, including power supplies and motor control. It is popularly used in buck converters, due to its low resistance and fast switching speeds, as well as in low side switches, because of its high breakdown voltage. It can also be used in other high voltage applications, such as switch mode power supplies and inverters.
Overall, the IXTA10P50P is an excellent choice for applications requiring high power. Its fast switching speeds, low resistance and high voltage ratings make it ideal for power electronics applications such as power supplies, motor controllers, and inverters.
The specific data is subject to PDF, and the above content is for reference
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IXTA10P50P Datasheet/PDF