IXTA10P50PTRL Discrete Semiconductor Products |
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Allicdata Part #: | IXTA10P50PTRLTR-ND |
Manufacturer Part#: |
IXTA10P50PTRL |
Price: | $ 2.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 500V 10A TO-263AA |
More Detail: | P-Channel 500V 10A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | IXTA10P50PTRL Datasheet/PDF |
Quantity: | 7200 |
800 +: | $ 2.01049 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2840pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | PolarP™ |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IXTA10P50PTRL is a high-speed, low-loss super-junction (SJ) power metal-oxide-semiconductor field-effect transistor (MOSFET) that provides reliable, low-loss switching for high current applications. This semiconductor device is designed for high-power efficiency, high-frequency performance and low total harmonic distortion. The IXTA10P50PTRL is a single-pole, double-throw (SPDT) FET with on-resistance of 10 mOhms max. It has a wide operating temperature range of -55°C to +175°C and a very low reverse recovery charge (Qrr) of 83 nC.
The IXTA10P50PTRL is used in high-power applications such as DC-DC converters, motor drives, lighting, and more. In DC-DC converters, this sophisticated device helps reduce total losses from switch losses and rebound charge. Its fast switching capabilities reduce switching time and reverse recovery time while enhancing efficiency and power supply hold up time. In motor drives, its fast switching helps to reduce external switching components and improves system system reaction speed, while its low switching losses result in higher efficiency. Similarly, the IXTA10P50PTRL is used in lighting applications to improve system efficiency and Power Factor Correction (PFC).
The IXTA10P50PTRL features a unique vertical super-junction structure which enables fast switching times and low losses. This structure works by incorporating multiple thin cells with high doping concentrations that in turn form a vertical tunnel which is then divided into a number of subcells. These subcells are stacked together and divided from each other by thin layers of oxide. This oxide helps to reduce the losses and swelling of the subcells.
The IXTA10P50PTRL is usually driven through a gate driver in applications such as DC-DC converters and motor drives. The gate driver ensures that the gate of the MOSFET is driven to its source voltage and is able to switch large amounts of current. The gate driver is usually a single-stage and set to reduce the drive no less than a few volts for a reliable low gate drive of the gate threshold voltage (Vth). The gate threshold voltage (Vth) of the IXTA10P50PTRL is 5 V.
The IXTA10P50PTRL is a robust and reliable MOSFET that provides superior performance in a wide range of conditions. Its low conduction and switching losses, along with its fast switching capability make it ideal for high power applications such as DC-DC converters, lighting, and motor drives. The IXTA10P50PTRL’s unique vertical super junction structure provides superior performance along with high efficiency, making it an ideal choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
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