IXTA10P50PTRL Allicdata Electronics

IXTA10P50PTRL Discrete Semiconductor Products

Allicdata Part #:

IXTA10P50PTRLTR-ND

Manufacturer Part#:

IXTA10P50PTRL

Price: $ 2.21
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 500V 10A TO-263AA
More Detail: P-Channel 500V 10A (Tc) 300W (Tc) Surface Mount TO...
DataSheet: IXTA10P50PTRL datasheetIXTA10P50PTRL Datasheet/PDF
Quantity: 7200
800 +: $ 2.01049
Stock 7200Can Ship Immediately
$ 2.21
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: PolarP™
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IXTA10P50PTRL is a high-speed, low-loss super-junction (SJ) power metal-oxide-semiconductor field-effect transistor (MOSFET) that provides reliable, low-loss switching for high current applications. This semiconductor device is designed for high-power efficiency, high-frequency performance and low total harmonic distortion. The IXTA10P50PTRL is a single-pole, double-throw (SPDT) FET with on-resistance of 10 mOhms max. It has a wide operating temperature range of -55°C to +175°C and a very low reverse recovery charge (Qrr) of 83 nC.

The IXTA10P50PTRL is used in high-power applications such as DC-DC converters, motor drives, lighting, and more. In DC-DC converters, this sophisticated device helps reduce total losses from switch losses and rebound charge. Its fast switching capabilities reduce switching time and reverse recovery time while enhancing efficiency and power supply hold up time. In motor drives, its fast switching helps to reduce external switching components and improves system system reaction speed, while its low switching losses result in higher efficiency. Similarly, the IXTA10P50PTRL is used in lighting applications to improve system efficiency and Power Factor Correction (PFC).

The IXTA10P50PTRL features a unique vertical super-junction structure which enables fast switching times and low losses. This structure works by incorporating multiple thin cells with high doping concentrations that in turn form a vertical tunnel which is then divided into a number of subcells. These subcells are stacked together and divided from each other by thin layers of oxide. This oxide helps to reduce the losses and swelling of the subcells.

The IXTA10P50PTRL is usually driven through a gate driver in applications such as DC-DC converters and motor drives. The gate driver ensures that the gate of the MOSFET is driven to its source voltage and is able to switch large amounts of current. The gate driver is usually a single-stage and set to reduce the drive no less than a few volts for a reliable low gate drive of the gate threshold voltage (Vth). The gate threshold voltage (Vth) of the IXTA10P50PTRL is 5 V.

The IXTA10P50PTRL is a robust and reliable MOSFET that provides superior performance in a wide range of conditions. Its low conduction and switching losses, along with its fast switching capability make it ideal for high power applications such as DC-DC converters, lighting, and motor drives. The IXTA10P50PTRL’s unique vertical super junction structure provides superior performance along with high efficiency, making it an ideal choice for high power applications.

The specific data is subject to PDF, and the above content is for reference

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