Allicdata Part #: | IXTA160N085T-ND |
Manufacturer Part#: |
IXTA160N085T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 85V 160A TO-263 |
More Detail: | N-Channel 85V 160A (Tc) 360W (Tc) Surface Mount TO... |
DataSheet: | IXTA160N085T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 164nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 85V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXTA160N085T is a power MOSFET device designed for a variety of applications. It is designed to be a low-on-resistance, high-performance power switching device suitable for a wide variety of applications such as motor control, AC motor speed control, DC motor speed control, DC motor drive, power supply, and so on. The IXTA160N085T has been designed to offer superior performance over other technologies such as switching, linear and other components.
The IXTA160N085T is a single N-channel enhancement-mode, metal-oxide-semiconductor field-effect transistor (MOSFET). It is suitable for use in low-voltage, medium-current applications and is capable of switching up to 1A at 100V. It is also able to achieve an on-state resistance of less than 0.016Ohm at 4.5V. This makes it ideal for use in a range of high-speed switching and power applications. It is available in package styles such as TO-220AB, SOT-223AB, SSOP-8, TSSOP-8AB, and SMD packages.
The working principle of the IXTA160N085T MOSFET is based on the concept of negative differential resistance. When a reverse-biased gate-source voltage is applied, electrons move away from the source and will eventually reach the drain. The drain-source voltage will drop and this causes a negative differential resistance. This causes the drain current to increase, resulting in an increase in power dissipation. This negative differential resistance also increases the drain-source voltage, resulting in a reduction in the current-gain of the device.
The IXTA160N085T is an ideal choice for use in a variety of applications including motor control, low-voltage, medium-current applications, and DC motor drive, power supply, and so on. It is capable of providing superior performance over other technologies due to its low on-resistance, high-performance switching characteristics. With its ability to achieve an on-state resistance of less than 0.016Ohm at 4.5V and its ability to switch up to 1A at 100V, it is perfect for any requirement that needs a low-on-resistance, high-performance power switching device.
The specific data is subject to PDF, and the above content is for reference
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