Allicdata Part #: | IXTA20N65X-ND |
Manufacturer Part#: |
IXTA20N65X |
Price: | $ 5.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 650V 20A TO-263 |
More Detail: | N-Channel 650V 20A (Tc) 320W (Tc) Surface Mount TO... |
DataSheet: | IXTA20N65X Datasheet/PDF |
Quantity: | 51 |
1 +: | $ 5.03370 |
50 +: | $ 4.04271 |
100 +: | $ 3.68336 |
500 +: | $ 2.98262 |
1000 +: | $ 2.51546 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 320W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1390pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 210 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA20N65X is a type of Field Effect Transistor (FET) that is used in a variety of applications. This type of transistor is used to amplify, switch, and control electrical signals. The IXTA20N65X is an n-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), meaning that it has an n-type gate. This type of FET is especially useful for providing low-noise amplification and protecting sensitive components from electrical interference.
The IXTA20N65X has a few characteristics that make it ideal for certain applications. It has a low on-resistance which allows for minimal power loss. This is especially important for applications that require high efficiency or require power to be conserved. The IXTA20N65X also has a fast switching speed, which makes it suitable for high-speed signal processing. It also has a high-input impedance, which is useful for applications where signal integrity is important.
The working principle of the IXTA20N65X is similar to other types of FETs. It works by applying a voltage to the gate, which sets up an electric field between the gate and the source of the device. This electric field causes current to flow from the source to the drain, thus allowing the current to be switched on and off. The amount of current that is allowed to pass through the transistor is controlled by the amount of voltage applied to the gate. Depending on the type of FET, the gate voltage can cause either an enhancement or depletion of the current in the channel.
In terms of application, the IXTA20N65X is most commonly used in high-speed communications applications. This type of MOSFET is often used in power converters, as well as in power control circuits. It is also commonly used to switch power devices on and off, and is often used in auto-ranging systems. Other applications of the IXTA20N65X include in digital to analog converters, audio amplifiers, and digital signal processing systems.
The IXTA20N65X is a versatile Field Effect Transistor (FET) that is useful for a variety of applications. It has a low on-resistance and a fast switching speed, allowing it to be used in applications requiring high efficiency and signal integrity. It also has an n-type gate, which is useful for providing low-noise amplification and protecting sensitive components from electrical interference. In terms of applications, the IXTA20N65X is most often used in high-speed communications applications and power control circuits.
The specific data is subject to PDF, and the above content is for reference
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