IXTA54N30T Allicdata Electronics
Allicdata Part #:

IXTA54N30T-ND

Manufacturer Part#:

IXTA54N30T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 54A TO-263
More Detail: N-Channel 300V 54A (Tc) Surface Mount TO-263 (IXT...
DataSheet: IXTA54N30T datasheetIXTA54N30T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The IXTA54N30T is a high-power, high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) developed by IXYS Corporation. It is designed for high-frequency switching applications such as inverters, motor controls, and battery chargers. As with all MOSFETs, the IXTA54N30T can be used as an amplifier or a switch in circuits, depending on the application. In this article, we will discuss the IXTA54N30T’s application fields and working principles.

IXTA54N30T Application Fields

The IXTA54N30T is designed for use in high-power, high-frequency applications. It is widely used in power electronic applications such as inverters, motor controls, and battery chargers. It is also suitable for applications such as solar spike protection and speaker box protection. The IXTA54N30T’s impressive power handling capabilities and fast switching times make it a suitable choice for these demanding applications.

IXTA54N30T Working Principle

A MOSFET is an insulated-gate field-effect transistor, a three-terminal device which uses the movement of electrons through a semiconductor to amplify or switch an electrical signal. The IXTA54N30T has an N-channel type with three terminals: drain, source, and gate. The gate terminal is isolated from the other two by a thin insulator. When a voltage is applied to the gate, it creates an electric field that attracts electrons in the N-channel, allowing current to flow from the drain to the source. This control of current enables the IXTA54N30T to be used as an amplifier or a switch.

IXTA54N30T Advantages and Limitations

The IXTA54N30T has several advantages over other types of MOSFETs. It offers high-frequency switching capabilities and excellent thermal stability. It also has very low on-resistance and superior switching speed. However, it does have some limitations. It requires a higher gate voltage to turn it on than other MOSFETs and it is sensitive to electrostatic discharge, making it unsuitable for use in environments where this may be an issue.

Conclusion

The IXTA54N30T is a high-power, high-performance N-channel MOSFET, designed for high-frequency switching applications such as inverters, motor controls, and battery chargers. Its advantages include high-frequency switching capabilities, low on-resistance, and fast switching speed; however, it has some limitations such as a higher gate voltage or susceptibility to static electricity. Now that you know more about the IXTA54N30T’s application field and working principles, you can make an educated decision about whether or not it is suitable for your project.

The specific data is subject to PDF, and the above content is for reference

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