| Allicdata Part #: | IXTA80N10T-ND |
| Manufacturer Part#: |
IXTA80N10T |
| Price: | $ 2.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 100V 80A TO-263 |
| More Detail: | N-Channel 100V 80A (Tc) 230W (Tc) Surface Mount TO... |
| DataSheet: | IXTA80N10T Datasheet/PDF |
| Quantity: | 701 |
| 1 +: | $ 2.30000 |
| 10 +: | $ 2.23100 |
| 100 +: | $ 2.18500 |
| 1000 +: | $ 2.13900 |
| 10000 +: | $ 2.07000 |
| Vgs(th) (Max) @ Id: | 5V @ 100µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 230W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3040pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
| Series: | TrenchMV™ |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTA80N10T is a MOSFET, or Metal Oxide Field Effect Transistor, that is used in a variety of different applications. It is a single type MOSFET, meaning that it is composed of only one type of metal oxide material, which is typically gallium arsenide. This type of MOSFET has a high voltage rating of 600V and a current rating of 40A, making it suitable for many different types of applications. It also has a very low on-resistance, making it suitable for applications requiring high efficiency.
The IXTA80N10T is typically used in applications that require high frequency switching, such as radio frequency circuits. Due to its high frequency switching capability, it can also be used in other applications such as switching power supplies and other power control circuits. The device has an ultra low output capacitance, which makes it ideal for high speed applications as well. It also has a low gate charge, allowing for smooth switching and low power consumption.
The working principle of the IXTA80N10T is based on the charge-storage principle. This means that when the gate-source voltage is applied to the device, a channel is created in the metal oxide layer between the source and drain. The current flowing through this channel, which is known as the drain current, is controlled by the gate voltage, which can be adjusted to alter the drain current.
The IXTA80N10T is typically used in a variety of applications, ranging from motor drives to medical equipment to power supplies. The device can be used in high speed switching applications, such as DC-DC converters and other power control applications. It is also an ideal device for applications that require high efficiency, such as LED lighting and power supplies. The device also works well in high voltage applications, such as voltage regulators, in order to provide a stable output voltage.
In conclusion, the IXTA80N10T is a single type MOSFET that is well suited for a wide variety of applications. It has a high voltage rating and a low on-resistance, making it suitable for efficiency-based applications. It is also capable of high frequency switching, as well as low gate charge and low output capacitance. This makes the device an ideal choice for a variety of high speed applications, such as voltage regulators, DC-DC converters, and other power control circuits. As such, the IXTA80N10T is a highly versatile MOSFET that can be used in many different applications.
The specific data is subject to PDF, and the above content is for reference
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IXTA80N10T Datasheet/PDF