IXTA220N075T Allicdata Electronics
Allicdata Part #:

IXTA220N075T-ND

Manufacturer Part#:

IXTA220N075T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 75V 220A TO-263
More Detail: N-Channel 75V 220A (Tc) 480W (Tc) Surface Mount TO...
DataSheet: IXTA220N075T datasheetIXTA220N075T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 480W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXTA220N075T is a silicon based transistor from IXYS Integrated Circuits, Inc. It is part of the specialized power MOSFET series and comes in a D2PAK package. This article will discuss the application field and working principle of the IXTA220N075T.

Applications

The IXTA220N075T is usually found in power supply systems, motor drives, and other industrial and automotive applications. It is commonly used to switch or amplify electrical signals and power supplies. It is also useful for improving system efficiency, providing greater current capabilities, and reducing switching losses. This makes it a valuable component in high-frequency and high-power applications, such as wireless communications, solar energy, and electric vehicle applications. Additionally, its fast switching speeds reduce the losses associated with inductive components, while its design provides high peak current capabilities and short circuit protection.

Working Principle

At the heart of the IXTA220N075T is a MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. It is a special type of transistor designed for power switching applications. It is constructed of multiple layers of doping substances and insulation materials that allow it to be used for very large power switching tasks. In operation, the MOSFET acts as a switch, whereby a small voltage across the device\'s gate terminal turns the transistor on or off, by either blocking or allowing the current from the source to the drain. When the gate voltage is above the threshold voltage, current is allowed to flow between the source and the drain. The IXTA220N075T has an enhancement-mode MOSFET, meaning that the device will remain off until a voltage is applied to the gate terminal. The IXTA220N075T also features a fast switching time and an exceptionally low gate charge, making it ideal for fast switching and high power applications.

In summary, the IXTA220N075T can be used for high-frequency and high-power power switching applications due to its fast switching times and low gate charge. It is also beneficial for increasing system efficiency, providing greater current capability, and reducing switching losses. Its applications include power supply systems, motor drives, and other industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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