IXTA110N055T

Vgs(th) (Max) @ Id:	4V @ 100µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (IXTA)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	230W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3080pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	67nC @ 10V
Series:	TrenchMV™
Rds On (Max) @ Id, Vgs:	7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<p>The IXTA110N055T is a reset IC with a low on-state resistance, high peak output current and low trigger current. It is a type of transistor known as an enhancement mode vertical insulated-gate FET or MOSFET. As one of the most commonly used transistors for switching applications, IXTA110N055T are used in a wide variety of products, including display monitors and power supplies. In this article, we will discuss the application fields and working principle of the IXTA110N055T.</p><h2>Application Fields</h2><p>As a highly efficient and reliable transistor, the IXTA110N055T finds uses in many applications, especially in display monitors and power supplies. When it comes to display monitors, it is primarily used as an on/off switch, allowing the power to be delivered to the monitor with minimum losses. In power supplies, its low on-state resistance ensures that the voltage remains constant, allowing for efficient power delivery.</p><p>Aside from these applications, the IXTA110N055T can also be used to control a wide range of devices, such as motors, lights and other electrical components. Its high peak output current and low trigger current make it ideal for controlling these devices with precision.</p><h2>Working Principle</h2><p>The working principle of the IXTA110N055T is based on its enhancement mode vertical insulated-gate FET or MOSFET design. The FET is composed of three terminals: the gate, drain, and source. The gate terminal is connected to the control transistor, while the source and drain terminals are connected to the circuit.</p><p>When the gate voltage is higher than the threshold voltage, the MOSFET is in an ‘on’ state, allowing current to flow between the source and gate terminals. This causes a current flow and a small voltage drop across the drain and source terminals, resulting in a very low on-state resistance. When the gate voltage is lower than the threshold, the MOSFET is in an ‘off’ state, blocking any current from flowing between the source and gate terminals.</p><p>In summary, the IXTA110N055T is a highly efficient and reliable transistor that can be used in a wide variety of applications, especially in display monitors and power supplies. Its working principle is based on the enhancement mode vertical insulated-gate FET or MOSFET design, which allows for precise control and low on-state resistance.</p>

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