Allicdata Part #: | IXTA12N50P-ND |
Manufacturer Part#: |
IXTA12N50P |
Price: | $ 1.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 12A D2-PAK |
More Detail: | N-Channel 500V 12A (Tc) 200W (Tc) Surface Mount TO... |
DataSheet: | IXTA12N50P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.77509 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1830pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | Polar™ |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTA12N50P is a part of the high-performance N Channel Field Effect Transistor (FET) series from IXYS. It is a single P-type MOSFET device with low on-resistance and current handling capability up to 10A. It features a full-bodied 7A continuous current, 100V drain-source voltage blocking capability, and low effective output capacitance. This makes IXTA12N50P suitable for a variety of power management applications, such as DC-DC converters, Motor control, Display Power Supplies, and Uninterrupted Power Supplies (UPS).
The IXTA12N50P utilizes a MOSFET transistor operating with low drain-to-source resistance. A MOSFET is a type of transistor that uses two input signals to control the flow of current between two source and drain terminals. The source is connected to a “gate” voltage, while the drain is connected to a “gate” voltage. When the gate voltage is high, charge flows through the transistor, allowing current to flow between the source and drain terminals. When the gate voltage is low, the transistor’s resistance increases, blocking the flow of charge and thus the current.
One key benefit of the IXTA12N50P for it’s versatility due to its compatible gate voltage voltage range between - 3V to + 10V. This allows it to be used in a variety of applications including DC-DC converters, motor control, display power supplies and so forth. Additionally, the low on-resistance allows for better regulation of voltage, current and power, while reducing power losses, ultimately resulting in higher overall efficiency.
IXTA12N50P also utilizes various protection features such as over-temperature safety shutdown, gate over-voltage protection, and gate reverse-current protection, making it suitable for a wide range of demanding applications. The superior drain-source blocking across 100V, its low switching loss and high efficiency are ideal for high voltage applications such as AC to DC power supplies.
While there are several components available for power management and other applications, the IXTA12N50P stands out due to its low on-resistance and versatile. This makes it an ideal choice for designers looking for a reliable, cost-effective and high-performing single MOSFET.
The specific data is subject to PDF, and the above content is for reference
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