IXTA130N10T-TRL Allicdata Electronics
Allicdata Part #:

IXTA130N10T-TRLTR-ND

Manufacturer Part#:

IXTA130N10T-TRL

Price: $ 1.22
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 100V 130A TO263
More Detail: N-Channel 100V 130A (Tc) 360W (Tc) Surface Mount T...
DataSheet: IXTA130N10T-TRL datasheetIXTA130N10T-TRL Datasheet/PDF
Quantity: 1000
800 +: $ 1.09893
Stock 1000Can Ship Immediately
$ 1.22
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IXTA130N10T-TRL is a non-insulated and top-level NFET (N-Channel Field Effect Transistor). The device is developed by IXYS Corporation, and it is a main component in industrial thyristors. It can be used to compose various high power switches, protection devices and many kinds of power controllers.

The IXTA130N10T-TRL features a drain current of 130A, drain-source voltage of 100V and maximum power dissipation of 80W. The gate threshold voltage is -3V, gate-source voltage 4.5V and the on-resistance is 33mΩ at 25°C. The device mounts on a TO-252AA package and it is a popular choice among many power controllers and switches.

This device has a wide range of applications in the industrial system. It can be used in frequency control systems, TV and radio antenna switches, bridge rectifiers, dual-pole and single-pole contactors, motor controllers and many other applications. It can also be used in multi-level inverter drives, double-pole switches and alternative switching systems. Besides, it can be used in bridges, resistors, current limiters, UPS systems, motor-speed controllers, timing circuits and many other applications.

The device works as an electronic switch to control the flow of current. When a positive voltage is applied to the Gate terminal of the device, it causes the internal MOSFET to turn on, which allows the current to flow through the drain-source connections. The drain-source voltage across the device is determined by the amount of current flowing through it. The device can be used as a buffer, amplifier, oscillator or voltage regulator depending on the circuit it is used in.

The IXTA130N10T-TRL is a feature-rich NFET device with numerous applications in industrial system. It is designed to switch high power with low on-resistance, and offers high-speed switching with a wide operating temperature range. The device is widely used in various power controllers and switches. It efficiently controls the current flow with its gate-source voltage, making it a desirable choice for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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