| Allicdata Part #: | IXTA15N50L2-ND |
| Manufacturer Part#: |
IXTA15N50L2 |
| Price: | $ 8.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 15A TO-263 |
| More Detail: | N-Channel 500V 15A (Tc) 300W (Tc) Surface Mount TO... |
| DataSheet: |  IXTA15N50L2 Datasheet/PDF |
| Quantity: | 326 |
| 1 +: | $ 7.75530 |
| 50 +: | $ 6.35683 |
| 100 +: | $ 5.73659 |
| 500 +: | $ 4.80633 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4080pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 123nC @ 10V |
| Series: | Linear L2™ |
| Rds On (Max) @ Id, Vgs: | 480 mOhm @ 7.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTA15N50L2 transistor is a type of field-effect transistor (FET). FETs are commonly used for amplifying, switching, and low-voltage applications. They work by controlling the electric field between two electrodes, the source and the drain, by modulating a third electrode, the gate. The IXTA15N50L2 is a single FET, meaning that it has only one active device. It is mainly used as a switch, as it can handle relatively high input currents, allowing it to operate at high frequencies.
The IXTA15N50L2 is a high-performance transistor that can be used in extreme conditions. It is designed to work in environments that require extremely low input bias current and low leakage current. It has a low on-resistance—the resistance between the drain and the source when the switch is on—which makes it ideal for high-speed switching applications. The IXTA15N50L2 also features a minimum guaranteed on-time of 15 nanoseconds, making it suitable for use in digital and analog applications.
The working principle behind the IXTA15N50L2 is simple. It consists of a source, a gate, and a drain. When a voltage is applied to the gate, an electric field is generated, which attracts electrons away from the source and towards the drain. This generates a conducting path between the source and the drain, allowing current to flow. When the voltage is removed, the electric field dissipates, and the current flow stops.
The IXTA15N50L2 is typically used in high-speed switching and power conversion applications, such as power amplifiers, boost converters, and motor controls. It is also used in communications systems and automotive applications. Its wide range of features, including a low input bias current, high switching speed, and low on-resistance, make it an attractive solution for a variety of applications.
In conclusion, the IXTA15N50L2 is a high-performance transistor that is designed for use in extreme conditions. It is widely used in communications systems, automotive applications, and high-speed switching and power conversion applications. Its low input bias current, high switching speed, and low on-resistance make it an attractive solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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