IXTA170N075T2 Allicdata Electronics
Allicdata Part #:

IXTA170N075T2-ND

Manufacturer Part#:

IXTA170N075T2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 75V 170A TO-263
More Detail: N-Channel 75V 170A (Tc) 360W (Tc) Surface Mount TO...
DataSheet: IXTA170N075T2 datasheetIXTA170N075T2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
Series: TrenchT2™
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTA170N075T2 is a type of power MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. The device is used in high-voltage switching applications, and its operating principle is relatively simple to understand. In a MOSFET, the gate terminal controls the conductivity of the Source and Drain terminals. This type of power MOSFET has been developed with an excellent performance relative to its size, allowing it to deliver superior performance in higher voltage applications.The IXTA170N075T2 is an N-channel power MOSFET, which means that it has a current flow between the Source and Drain terminals at the same time. The device is specified for a drain-source voltage of 170V, with a 0.75V gate-source breakdown voltage. The device comes in a TO-220 package, allowing for easy mounting on PCBs and flexible management.The main application of the IXTA170N075T2 is high voltage power switching and circuit protection. This type of MOSFET is ideal for high current applications that require low bead leakage, as it provides excellent power performance with minimal power waste. It is designed for use in applications such as the control of motors, high voltage DC-DC converters, power lines, and power supplies, as well as in smart home automation. In addition, it also serves as a suitable replacement for bipolar transistors in many industrial applications.The IXTA170N075T2 has been designed with superior switching performance, allowing it to switch at high speeds with minimal power loss. It also has a high input impedance, allowing for reduced power dissipation and increased reliability. Furthermore, it has stable switching characteristics, meaning the device will remain reliable and consistent when it is used over a wide range of load conditions.When the IXTA170N075T2 is used in a circuit, the power connected to the drain terminal will activate the gate, allowing a current to flow from the source to the drain. The current will continue to flow until the gate is shut off, either by the application of an external signal, or by the heat generated by the current. The device can be used for both AC and DC switching, and the amount of power it is able to switch will depend on the specifications of the device.Overall, the IXTA170N075T2 is an excellent choice for a wide range of high voltage applications, due to its superior power performance, high input impedance and stable switching characteristics. The device is also highly reliable and durable, meaning it can be used for many years without the need for replacement or maintenance.

The specific data is subject to PDF, and the above content is for reference

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