Allicdata Part #: | IXTA170N075T2-ND |
Manufacturer Part#: |
IXTA170N075T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 75V 170A TO-263 |
More Detail: | N-Channel 75V 170A (Tc) 360W (Tc) Surface Mount TO... |
DataSheet: | IXTA170N075T2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6860pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 109nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 170A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA170N075T2 is a type of power MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. The device is used in high-voltage switching applications, and its operating principle is relatively simple to understand. In a MOSFET, the gate terminal controls the conductivity of the Source and Drain terminals. This type of power MOSFET has been developed with an excellent performance relative to its size, allowing it to deliver superior performance in higher voltage applications.The IXTA170N075T2 is an N-channel power MOSFET, which means that it has a current flow between the Source and Drain terminals at the same time. The device is specified for a drain-source voltage of 170V, with a 0.75V gate-source breakdown voltage. The device comes in a TO-220 package, allowing for easy mounting on PCBs and flexible management.The main application of the IXTA170N075T2 is high voltage power switching and circuit protection. This type of MOSFET is ideal for high current applications that require low bead leakage, as it provides excellent power performance with minimal power waste. It is designed for use in applications such as the control of motors, high voltage DC-DC converters, power lines, and power supplies, as well as in smart home automation. In addition, it also serves as a suitable replacement for bipolar transistors in many industrial applications.The IXTA170N075T2 has been designed with superior switching performance, allowing it to switch at high speeds with minimal power loss. It also has a high input impedance, allowing for reduced power dissipation and increased reliability. Furthermore, it has stable switching characteristics, meaning the device will remain reliable and consistent when it is used over a wide range of load conditions.When the IXTA170N075T2 is used in a circuit, the power connected to the drain terminal will activate the gate, allowing a current to flow from the source to the drain. The current will continue to flow until the gate is shut off, either by the application of an external signal, or by the heat generated by the current. The device can be used for both AC and DC switching, and the amount of power it is able to switch will depend on the specifications of the device.Overall, the IXTA170N075T2 is an excellent choice for a wide range of high voltage applications, due to its superior power performance, high input impedance and stable switching characteristics. The device is also highly reliable and durable, meaning it can be used for many years without the need for replacement or maintenance.
The specific data is subject to PDF, and the above content is for reference
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