IXTA18P10T

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IXTA18P10T Application Field and Working PrincipleIXTA18P10T is a high-voltage, enhanced performance, self-protected N-Channel MOSFET. It is suitable for Load Switch and OFF-Line SMPS applications. This device combines a low gate threshold voltage with low on-resistance in a very small footprint. It is designed to save power and increase system range efficiency.The IXTA18P10T device has a voltage rating of 50A, a drain-source on-state resistance rating of 18mΩ maximum and a threshold voltage rating of 2.5 V typically. It is available in an ultrasmall SO8 package format, featuring a 1mm max profile and save more than 60% of board space compared with the standard SO8 package devices.The IXTA18P10T is built with a composite gate structure composed of a high performance N-Channel Field Effect Transistor (FET), a built-in MOSFET protection element, and a built-in current limiting resistor. This structure prevents failures due to short circuit conditions, which are caused by external components, such as ESD, transients, and shorts between drain and gate. The device also offers a fast switching speed to reduce energy loss and a built-in impedance reduction design to reduce RDS(ON) variation with temperature.Furthermore, the high voltage IXTA18P10T operates at temperatures from -55°C to +175°C, enabling designs for an even wider range of applications. The IXTA18P10T is AEC-Q101 qualified, supporting automotive and industrial applications.The working principle of IXTA18P10T device is based on field-effect transistor (FET) technology. It works as a switch that can either pass a signal or block it from passing through. The FET consists of three terminals: the gate, the source and the drain, and the drain and source are insulated from each other with a dielectric layer.When a positive voltage is applied to the gate, the electrons flow into the gate and attract it towards the source and drain. This creates a channel through which the electrons can flow from the source terminal to the drain terminal, which is referred to as inversion layer or depletion layer. The amount of current that can flow through the channel depends on the strength of the voltage applied to the gate, and this is why it is referred to as a voltage-controlled device.The IXTA18P10T uses an internal built-in protection device to protect against over current and over-temperature conditions. The internal protection element will sense excess current flow, or temperature conditions beyond preset values and actively attempt to limit current flow, thermal runaway or overvoltage.In summary, IXTA18P10T is a high-voltage, enhanced performance, self-protected N-Channel MOSFET, suitable for Load Switch and OFF-Line SMPS applications. It has a low gate threshold voltage, low on-resistance, wide range of operating temperature, AEC-Q101 qualified which makes reliable for automotive and industrial application designs. The FET works with a principle of creating a channel through which the electrons can flow from the source terminal to the drain terminal by applying a positive voltage to the gate. The integrated protection element will sense unwanted current flow and over-temperature conditions and attempt to limit the current flow and thermal runaway.

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