Allicdata Part #: | IXTA1N120P-ND |
Manufacturer Part#: |
IXTA1N120P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1200V 1A TO-263 |
More Detail: | N-Channel 1200V 1A (Tc) 63W (Tc) Surface Mount TO-... |
DataSheet: | IXTA1N120P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.6nC @ 10V |
Series: | PolarVHV™ |
Rds On (Max) @ Id, Vgs: | 20 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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When an electronic circuit requires power switching, a field effect transistor (FET) can be used. The IXTA1N120P is a single N-channel enhancement FET designed to improve energy efficiency, reduce standby power loss and provide superior performance in audio applications. The IXTA1N120P is designed to operate in a wide range of voltage and current ranges, making it an ideal choice for a variety of applications.
FETs are three-terminal semiconductor devices made of an array of thin metal-oxide-semiconductor (MOS) cells. FETs are normally used in logic circuits where power FETs are used for higher power switching applications. The MOS transistors are divided into two types, n-channel and p-channel, and determine the direction of current flow in the channel between the terminals. N-channel FETs are the most widely used FETs because the n-channel type can be used for higher power switching and can be switched on or off faster than p-channel FETs.
The IXTA1N120P is an N-Channel FET with a drain-source voltage of -11 volts and a maximum drain current of 6.2 amps. The gate-source voltage recommended for the IXTA1N120P is -1.6 volts to +6 volts. The IXTA1N120P dissipates a maximum power of 3.5 watts when the drain-source voltage is 7 volts, making it suitable for use in low-power switching and audio applications.
The working principle of FETs is based on the transfer of electron charges between two terminals called the source and the drain.The voltage at the gate terminal affects thebarrier between the source and the drain and regulates or controls the current flow between them. By applying a voltage to the gate terminal, an electric field is created around the gate that widens or reduces the channel and therefore regulates the current flowing through the channel.
The IXTA1N120P is suited for use as an audio switch in low-power power supplies and in power amplifiers. It can also be used in switching circuits to control the flow of current and voltage to a load. It is designed to operate in switching mode and offers fast switching speeds, low on-state resistance and low gate charge, making it suitable for use in automotive, consumer and industrial applications.
The IXTA1N120P is an ideal choice for use in low-power audio applications where efficiency and low power loss is a concern. It is also suitable for use in switching applications such as DC to DC converters, intelligent power switches, and motor control circuits. It is capable of providing superior performance in low power applications and can be used as a switch for controlling the flow of current or voltage in a circuit.
The specific data is subject to PDF, and the above content is for reference
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