Allicdata Part #: | IXTA1N200P3HV-ND |
Manufacturer Part#: |
IXTA1N200P3HV |
Price: | $ 5.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 2000V 1A TO-263HV |
More Detail: | N-Channel 2000V 1A (Tc) 125W (Tc) Surface Mount TO... |
DataSheet: | IXTA1N200P3HV Datasheet/PDF |
Quantity: | 63 |
1 +: | $ 4.76280 |
50 +: | $ 3.90613 |
100 +: | $ 3.52504 |
500 +: | $ 2.95343 |
1000 +: | $ 2.57234 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 646pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 40 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
Drain to Source Voltage (Vdss): | 2000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA1N200P3HV is a single transistor specifically designed for use in a variety of high-speed applications. This transistor offers excellent high-speed performance and reliable operation. The IXTA1N200P3HV is a field effect transistor (FET) that has been designed to be used in high-power and low-voltage switching applications. The device features good on-resistance, low input capacitance, and fast switching speeds, making it a popular choice for use in high-power and low-voltage switching applications.The IXTA1N200P3HV can be used as an input or output element in a variety of circuits. It is a fast switching device with a maximum switching speed of 15 nanoseconds. The device is rated to operate over a wide temperature range from -55°C to 150°C. It is also designed to work in the presence of high-voltage switching applications, making it a suitable choice for use in a variety of high-power and low-voltage switching applications.The IXTA1N200P3HV FET is offered in a two-pin package which is compatible with most circuit boards. The device features low-package energy loss, which allows it to be used in high-speed applications without having to worry about excessive power dissipation.The IXTA1N200P3HV transistor offers excellent performance in a wide range of high-power and low-voltage switching applications. The device is designed to be used in a variety of high-performance, high-current applications such as switching power supplies and motor control. The IXTA1N200P3HV can also be used in other applications that require fast switching such as data converters and communication applications.The IXTA1N200P3HV is a single FET with an N-Channel structure. It works by controlling the current flow between the two terminals by applying an appropriate voltage across the terminals. The current flows between the two terminals when the voltage applied to the gate terminal is higher than the voltage applied to the source terminal. When the voltage applied to the source terminal is higher than the voltage applied to the gate terminal, no current will flow between the two terminals.The IXTA1N200P3HV has a threshold voltage of 4 volts, making it suitable for use in low-voltage switching applications. It also features a body diode which helps to protect the device from over-voltages and short-circuits. The device is designed for use in high-speed circuits where low-noise operation and high-efficiency is a priority.The IXTA1N200P3HV is a reliable and robust device that can be used in a variety of applications. It is an excellent choice for use in high-power and low-voltage switching applications. It is also suitable for use in a variety of other high-speed circuits such as data converters and communication applications.
The specific data is subject to PDF, and the above content is for reference
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