IXTA1R4N120P

Vgs(th) (Max) @ Id:	4.5V @ 100µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (IXTA)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	86W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	666pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	24.8nC @ 10V
Series:	Polar™
Rds On (Max) @ Id, Vgs:	13 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.4A (Tc)
Drain to Source Voltage (Vdss):	1200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTA1R4N120P Application Field and Working Principle

Introduction to IXTA1R4N120P

The IXTA1R4N120P is a power transistor used for high-speed switching applications. It is a combination of the N-channel and the positive drain-source breakdown voltage. These three elements form a very powerful power transistor. The operational junction temperature of the IXTA1R4N120P is much higher than the threshold voltage, making it suitable for high speed applications.

Applications of IXTA1R4N120P

The IXTA1R4N120P is ideal for use in high frequency and high voltage applications. It is typically used as a driver for high speed power control and for other such switch control applications. It is also used in consumer and industrial products such as fans, motors, pumps, toys and consumer audio systems. It is also used in the automotive industry, where it has been employed for numerous applications, such as the switching of high power motors, switching of high-power relays, and controlling high power lamps.

Working Principle of IXTA1R4N120P

The IXTA1R4N120P uses a unique combination of an N-channel and positive breakdown voltage to function as a power transistor. In its most common form, it consists of an N-channel MOSFET and a PNP transistor. The N-channel is responsible for providing the high current switching capability, while the PNP transistor is responsible for providing the voltage regulation. When the gate voltage of the IXTA1R4N120P surpasses its set threshold value, current flows from the drain to the source and the transistor is activated. When the gate voltage drops below its threshold value, the transistor then shuts off and stops the current flow. The PNP transistor\'s conduction ensures that the voltage stays within the preset levels, thus providing a stable voltage working environment. This works by keeping the voltage voltage and current closely controlled, and the transistor quickly turns off when the set threshold value is exceeded.The IXTA1R4N120P is a powerful power switching device, which can handle high power, high speed and high voltage applications. It is reliable, efficient, and resistant to many environmental conditions.

Conclusion

The IXTA1R4N120P is a power transistor used for high-speed switching applications. It is composed of an N-channel instead and a PNP transistor. It is used in high frequency and high voltage applications, such as use as a driver for high-speed power control and for other such switch control applications. The IXTA1R4N120P is reliable, efficient and resistant to many environmental conditions.

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