IXTA220N04T2-7 Allicdata Electronics
Allicdata Part #:

IXTA220N04T2-7-ND

Manufacturer Part#:

IXTA220N04T2-7

Price: $ 3.63
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 40V 220A TO-263-7
More Detail: N-Channel 40V 220A (Tc) 360W (Tc) Surface Mount TO...
DataSheet: IXTA220N04T2-7 datasheetIXTA220N04T2-7 Datasheet/PDF
Quantity: 1000
50 +: $ 3.26025
Stock 1000Can Ship Immediately
$ 3.63
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: TO-263-7 (IXTA..7)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Series: TrenchT2™
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTA220N04T2-7 is a single n-channel advanced MOSFET that can be used in a variety of applications. It has a low On-resistance and a low drain-source voltage, making it ideal for electronic systems where power efficiency is a priority. The IXTA220N04T2-7 has an array of features that make it an attractive choice for designers looking to build high performance systems.

The IXTA220N04T2-7 has an advanced MOSFET structure designed to offer higher levels of performance than traditional MOSFETs. Its floating hexagonal drain structure increases the device surface area for higher density integration and improved power performance. Its halo implant technology further optimizes device performance by minimizing the junction capacitance. This helps reduce the switching losses and improves efficiency and power density.

The IXTA220N04T2-7 offers a simple solution for creating a power saving design. It offers a low RDS(on) – the drain-to-source resistance at the rated voltage – and low gate-to-source voltage. This helps reduce switching losses and improves system efficiency. The IXTA220N04T2-7 is optimized for operation at high temperatures, offering stable performance and reliability in high power systems.

The IXTA220N04T2-7 is well suited for applications such as power management, audio amplifiers and low noise DC/DC converters. It can be used in a variety of power management and audio amplifier stages, from low power to high power applications. It is also designed to support stability in high power systems.

The IXTA220N04T2-7 works in unison with other devices to form the basis of an efficient power delivery system. For example, by pairing it with a switching regulator, an efficient DC/DC converter can be achieved.

The IXTA220N04T2-7 is an efficient and reliable device that can help designers create high performance electronic systems. It is easy to use and offers a low RDS(on) and low gate-to-source voltage. This helps reduce switching losses, improving system efficiency and performance. The IXTA220N04T2-7 is well suited for a variety of applications such as power management, audio amplifiers, and low noise DC/DC converters.

The specific data is subject to PDF, and the above content is for reference

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