Allicdata Part #: | IXTA230N075T2-7-ND |
Manufacturer Part#: |
IXTA230N075T2-7 |
Price: | $ 3.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 75V 230A TO-263 |
More Detail: | N-Channel 75V 230A (Tc) 480W (Tc) Surface Mount TO... |
DataSheet: | IXTA230N075T2-7 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 3.26025 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | TO-263-7 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 480W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 178nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 230A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA230N075T2-7 is a product within Vishay Intertechnology’s IXTA Series of power MOSFET transistors. This particular model is an N-channel Enhancement Mode transistor, suitable for applications that require low loss switching and high current capability. The device consists of a single power MOSFET transistor, housed in a TO-220 ST type package. This package allows for easy integration into existing systems, and the device itself is capable of conducting a current up to 230A at a maximum allow frequency of 30MHz.
The IXTA230N075T2-7 transistor is ideal for use in high power circuits, such as audio amplifiers, switch mode power supplies (SMPS), and a variety of other applications that require high current and/or reliable performance. This device offers several advantages over other types of transistors, such as its low on-resistance and high frequency response, as well as its incredibly low gate charge and input capacitance. All in all, the IXTA230N075T2-7 is a great solution for power management.
The working principle of the IXTA230N075T2-7 power MOSFET transistor is based on a simple concept. The device is constructed of two sections; the N-channel and the P-channel. When voltage is applied to its gate, a conductive path is created between the drain and the source. This allows for low on-resistance (Rds). The reason for this is simple; the electrons in the N-channel section are attracted to the gate and the electrons in the P-channel section are driven away from the gate, thus reducing the number of available pathways for current to flow. In addition, as the voltage increases on the gate, the resistance between the drain and the source further decreases, thus improving switching performance.
When the gate voltage is removed, the charge stored in the gate will cause the electrons to be repelled from the drain and source, thus closing the circuit. This process is known as the gating mechanism, and is used to improve the overall power efficiency of the device.
The IXTA230N075T2-7 is a great addition to any system that requires high current, low on-resistance switching and reliable performance. This device is perfect for SMPS operations, as well as audio amplifiers, high power switching circuits and a variety of other applications. Thanks to its low gate charge, low capacitance and high frequency response, the IXTA230N075T2-7 is sure to be an excellent choice for any power management system.
The specific data is subject to PDF, and the above content is for reference
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