Allicdata Part #: | IXTA27N20T-ND |
Manufacturer Part#: |
IXTA27N20T |
Price: | $ 1.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 20V 27A TO-263 |
More Detail: | N-Channel 20V 27A (Tc) Surface Mount TO-263 (IXTA... |
DataSheet: | IXTA27N20T Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.39469 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (IXTA) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The IXTA27N20T is a high-performance, high-voltage, low-on-resistance N-channel MOSFET designed to improve switching speed and provide high density power switches. It is made using a trench-gate technology. The IXTA27N20T is based on a vertical MOSFET (VMOS) structure, which is particularly suited for high voltage applications.
The IXTA27N20T is a single-gate MOSFET that is typically used in applications requiring superior switching speed, high density of power switching, and low on-resistance. Its combination of low on-resistance and high voltage allows it to be used in applications such as DC-DC power converters, switching applications, and circuit protection. It is also well suited for power management applications such as motor drive, HOT switch, and transient voltage suppression.
The working principle of a single-gate MOSFET is based on the concept of a three-terminal field-effect transistor. The single gate of the MOSFET is used to control the current flow through the device. When no voltage is applied to the gate, the MOSFET is in its OFF state, meaning no current flows through the device. When a voltage is applied to the gate, it induces a depletion region across the channel, allowing current to flow from source to drain. The higher the gate voltage, the wider the depletion region will be, resulting in an increased current flow. The IXTA27N20T also has an improved gate threshold voltage of 1.2 V to reduce power consumption.
The IXTA27N20T is suited for a wide range of applications, such as automotive, telecommunications, industrial, and consumer electronics. In automotive applications, it is commonly used in engine control units, airbag systems, and ABS systems. In telecommunications, the IXTA27N20T is used to support high voltage, continuous current flow in switches and multiplexers. In industrial applications, it can be used for DC motor drive, high power switching, and voltage regulation. It is also used for power management applications such as hot switches, low voltage connections, and transient voltage suppressors.
The IXTA27N20T is capable of providing high performance in a variety of applications. Its low on-resistance, high voltage, and high switching speed make it one of the most reliable MOSFETs on the market. This makes it the optimal choice for applications requiring superior switching speed and power density. It is easy to control, energy efficient, and reliable, making it the ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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