Allicdata Part #: | IXTA2N100-ND |
Manufacturer Part#: |
IXTA2N100 |
Price: | $ 2.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 2A TO-263 |
More Detail: | N-Channel 1000V 2A (Tc) 100W (Tc) Surface Mount TO... |
DataSheet: | IXTA2N100 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.31475 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 825pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA2N100 is a field effect transistor (FET) belonging to the single gate FETs family. It is specially designed as a low-voltage gate for protecting circuit and high-side switching applications. This type of transistor is used in various circuits to control the flow of electricity.
The IXTA2N100 is a depletion-mode device, meaning the transistor is enabled (or "on") if no sufficient voltage at the gate. The current flowing through the device is determined by the resistance the signal which is applied at the gate tells the transistor to open and close depending on the type of signal received.
This transistor has a wide range of applications. Its high input to output voltage and low on-state resistance makes it a suitable choice for various types of switching applications, such as blinking LEDs, level shifting, audio amplifiers, voltage regulators, etc. It is also ideal for use in robotics, automotive, and medical equipment applications, where efficient and accurate control of the current is of utmost importance.
The IXTA2N100 is composed of two tiny metal oxide layer. The source of this transistor is attached to the first layer, and the drain of the transistor is connected with the second layer. The two layers are separated by a thin layer of silicon oxide, which acts as an insulating layer between the two layers. When a signal is applied at the gate, it changes the electric field of the transistor and opens a channel between these two layers. This allows electrons to flow through the channel, thus generating current.
The source and the drain of this transistor both have an internal capacitance. When a signal is applied at the gate, the capacitance between the source and drain rises, allowing current to flow through the transistor. Presence of these two components also prevents the device from getting over-driven.
The IXTA2N100 also features complementary N-channel and P-channel counterparts, allowing designers to build complementary logic gates. This type of logic gate is used in designing integrated circuits (ICs) for use in microelectronic devices.
In addition to its normal mode of operation, the IXTA2N100 can also be operated in linear mode. In this mode, the device functions as a current-controlled current source, allowing the device to adjust the current within a particular range, based on the voltage applied at the gate. This type of operation is ideal for light intensity or temperature sensing applications.
Overall, the IXTA2N100 is a reliable device for use in various applications, such as switching, light intensity and temperature sensing, automotive, robotics and medical equipment applications. Its depletion-mode operation, wide input to output voltage ratio, and low on-state resistance makes it a suitable choice in such applications.
The specific data is subject to PDF, and the above content is for reference
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