IXTA2N100 Allicdata Electronics
Allicdata Part #:

IXTA2N100-ND

Manufacturer Part#:

IXTA2N100

Price: $ 2.57
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 2A TO-263
More Detail: N-Channel 1000V 2A (Tc) 100W (Tc) Surface Mount TO...
DataSheet: IXTA2N100 datasheetIXTA2N100 Datasheet/PDF
Quantity: 1000
50 +: $ 2.31475
Stock 1000Can Ship Immediately
$ 2.57
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTA2N100 is a field effect transistor (FET) belonging to the single gate FETs family. It is specially designed as a low-voltage gate for protecting circuit and high-side switching applications. This type of transistor is used in various circuits to control the flow of electricity.

The IXTA2N100 is a depletion-mode device, meaning the transistor is enabled (or "on") if no sufficient voltage at the gate. The current flowing through the device is determined by the resistance the signal which is applied at the gate tells the transistor to open and close depending on the type of signal received.

This transistor has a wide range of applications. Its high input to output voltage and low on-state resistance makes it a suitable choice for various types of switching applications, such as blinking LEDs, level shifting, audio amplifiers, voltage regulators, etc. It is also ideal for use in robotics, automotive, and medical equipment applications, where efficient and accurate control of the current is of utmost importance.

The IXTA2N100 is composed of two tiny metal oxide layer. The source of this transistor is attached to the first layer, and the drain of the transistor is connected with the second layer. The two layers are separated by a thin layer of silicon oxide, which acts as an insulating layer between the two layers. When a signal is applied at the gate, it changes the electric field of the transistor and opens a channel between these two layers. This allows electrons to flow through the channel, thus generating current.

The source and the drain of this transistor both have an internal capacitance. When a signal is applied at the gate, the capacitance between the source and drain rises, allowing current to flow through the transistor. Presence of these two components also prevents the device from getting over-driven.

The IXTA2N100 also features complementary N-channel and P-channel counterparts, allowing designers to build complementary logic gates. This type of logic gate is used in designing integrated circuits (ICs) for use in microelectronic devices.

In addition to its normal mode of operation, the IXTA2N100 can also be operated in linear mode. In this mode, the device functions as a current-controlled current source, allowing the device to adjust the current within a particular range, based on the voltage applied at the gate. This type of operation is ideal for light intensity or temperature sensing applications.

Overall, the IXTA2N100 is a reliable device for use in various applications, such as switching, light intensity and temperature sensing, automotive, robotics and medical equipment applications. Its depletion-mode operation, wide input to output voltage ratio, and low on-state resistance makes it a suitable choice in such applications.

The specific data is subject to PDF, and the above content is for reference

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