Allicdata Part #: | IXTA36P15P-ND |
Manufacturer Part#: |
IXTA36P15P |
Price: | $ 4.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 150V 36A TO-263 |
More Detail: | P-Channel 150V 36A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | IXTA36P15P Datasheet/PDF |
Quantity: | 888 |
1 +: | $ 3.75480 |
50 +: | $ 3.01568 |
100 +: | $ 2.74768 |
500 +: | $ 2.22494 |
1000 +: | $ 1.87645 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
Series: | PolarP™ |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTA36P15P is an isolated N-Channel power MOSFET, housed in a 4x4mm TSSOP Power56 package. This type of transistor, with its increased power efficiency, power density, and low on-resistance, is intended for high the current switching applications. Its high GaN performance capabilities are designed to meet the requirements of a very wide range of industrial and automotive applications, including in-vehicle display systems, infotainment, and third-party applications.
A MOSFET, or metal-oxide-semiconductor field-effect transistor, is a type of transistor that uses electricity to control the flow of current. The IXTA36P15P has a single N-channel terminal that is used to control the current and voltage supplied to the load. This transistor incorporates the latest in GaN technology, providing high performance in a compact form factor.
To understand how this type of FET functions, we must first discuss its two components: the gate and the source. The gate is the input terminal of the transistor and is used to control the current and voltage travelling through the device. The source is the output terminal of the transistor and is used to control the current and voltage travelling to the load.
The working principle of the IXTA36P15P is relatively simple. When a voltage is applied to the gate, it attracts electrons from the source and allows them to flow through the transistor. As the electrons flow, the transistor acts as an amplifier, allowing a higher voltage to be applied to the load. By manipulating the voltage on the gate, it is possible to control the amount of current and voltage travelling through the load.
In terms of its application field, the IXTA36P15P is ideally suited for medium to high power switching applications. Its rugged construction and high-power performance are ideal for industrial applications such as power supplies, motor control, and instrumentation. Additionally, its low on-resistance makes it a suitable choice for in-vehicle display systems, infotainment, and third-party applications that require high performance with low energy consumption.
The IXTA36P15P is an excellent choice for applications that require high performance and low on-resistance. Its power density, efficient power consumption, and single N-channel terminal make it a great choice for a wide range of industrial, automotive, and third-party applications. With its innovative GaN technology and reliable design, it provides users with the dependable performance and dependable power efficiency they need to get the job done.
The specific data is subject to PDF, and the above content is for reference
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