Allicdata Part #: | IXTA3N120TR-ND |
Manufacturer Part#: |
IXTA3N120TRL |
Price: | $ 2.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1200V 3A TO-263 |
More Detail: | N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO... |
DataSheet: | IXTA3N120TRL Datasheet/PDF |
Quantity: | 800 |
800 +: | $ 2.46692 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.5 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IXTA3N120TRL is a type of insulated-gate bipolar transistor (IGBT) module, used in many applications that require high power with low losses. It is a three-terminal device that can be used as either a switch or an amplifier. It is classified as a MOSFET (metal oxide semiconductor field effect transistor), which is a type of single-transistor component that has different characteristics than traditional silicon-based transistors. This type of transistor is designed to offer high speed and high frequency operation, combined with low power dissipation, which makes it ideal for use in high-performance applications.
An IGBT finds its place in many electronic applications, such as in adjustable-speed circuits for motors, switch-mode power supplies, power inverters, and renewable energy applications. The IXTA3N120TRL is a high-efficiency insulated-gate bipolar transistor that features an ultra-low ON-resistance and an extremely low ON-state gate drive. This makes it suitable for use in high-speed switching applications, where fast switching performance and low switching power loss is necessary.
Like traditional transistors, the IGBT has three terminals: the collector, the base and the emitter. The collector lead is connected to the external load, which gives the device its ability to control the output current. The emitter is connected to the current source, and the base lead is a low-power (less than 6V) control signal that determines whether the base current flows or not. However, unlike traditional transistors, the IGBT has a thick gate oxide layer which helps isolate the base from the collector and emitter, leading to lower power loss.
The IXTA3N120TRL further features internal Leadless Terminations and full-control gate drives, which provide fast and efficient gate control. This allows it to be used in applications that require high-frequency operation and fast switching speeds. The IXTA3N120TRL also has an integrated rechargeable capacitor, which allows for more efficient operation over a wide range of frequencies.
The IXTA3N120TRL is also designed for low power dissipation, allowing for more efficient operation. This device offers low gate threshold and low on-state voltage for higher efficiency at high frequencies, which helps to reduce power losses and extend device life. Additionally, it has an integrated temperature-independent reverse-recovery time which helps to reduce switching losses, allowing the IXTA3N120TRL to be used in switch-mode power supplies, power inverters, and renewable energy applications.
The IXTA3N120TRL is a versatile device that is well-suited for many high-performance applications. Its ability to provide high efficiency and low power loss, as well as its fast switching capabilities, makes it ideal for use in a wide range of applications. These features combined with its integrated Leadless Terminations, full-control gate drives, and integrated rechargeable capacitor make it an attractive choice for designers looking to maximize their performance and minimize their power dissipation.
The specific data is subject to PDF, and the above content is for reference
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