IXTA44P15TTRL Allicdata Electronics
Allicdata Part #:

IXTA44P15TTRLTR-ND

Manufacturer Part#:

IXTA44P15TTRL

Price: $ 2.09
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 150V 44A TO-263
More Detail: P-Channel 150V 44A (Tc) 298W (Tc) Surface Mount TO...
DataSheet: IXTA44P15TTRL datasheetIXTA44P15TTRL Datasheet/PDF
Quantity: 800
800 +: $ 1.90182
Stock 800Can Ship Immediately
$ 2.09
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 298W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
Series: TrenchP™
Rds On (Max) @ Id, Vgs: 65 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IXTA44P15TTRL is a field-effect transistor (FET) device with a single transistor channel. It is designed for use in high-frequency, low-power applications. The FET is manufactured on an n-type substrate and can be used for a variety of applications.

The IXTA44P15TTRL is a depletion-mode field-effect transistor (DMFET). It is a three-terminal device that is formed from a single semiconductor channel and is operated by pressing a gate voltage. The gate is insulated from the channel regions and the reverse-biased gate junction helps form the transistor\'s depletion gate.

A depletion-mode FET has an inherent direct current (DC) bias and can be either operated in an enhancement-mode or a depletion-mode. In the enhancement-mode, the DC bias of the device can be increased compared to the depletion mode by increasing the gate voltage. In the depletion-mode, the application of a voltage on the gate decreases the DC bias of the device.

The IXTA44P15TTRL is an ideal device for applications such as switch mode power supplies and amplifiers, where low on-resistance, low Capacitance and low gate power consumption are critical. The device can also be used for RF communications, clock oscillators and other high-frequency, low-power applications.

The IXTA44P15TTRL has a very low constant-on-resistance, referred to as RDS(on)max, which helps reduce the on-state power losses and enable efficient switch mode power supplies and amplifiers.

The IXTA44P15TTRL has a very low frequency roll-off and is ideal for high-frequency applications. The device also has a low gate threshold voltage and is able to switch on and off with low gate voltages.

The IXTA44P15TTRL can be used to build a wide range of circuits and systems. In switch mode power supplies, the device is used to create a high frequency switching circuit. The device can also be used to create multi-stage amplifiers and attenuators, digital-to-analog converters and frequency synthesizers.

The IXTA44P15TTRL has a high breakdown voltage, which corresponds to a high voltage rating. This makes the device well-suited for applications that require a higher voltage rating. The device also has a low resistance and excellent capacitance characteristics, which enables it to switch relatively quickly and accurately.

The IXTA44P15TTRL is an ideal choice for a variety of applications, due to its low-power, high-frequency, low resistance and excellent capacitance characteristics. Its low gate power consumption and high voltage rating also make it well-suited for high-power applications. It is an ideal choice for low-power applications such as switch mode power supplies, amplifiers, RF communications and clock oscillators.

The specific data is subject to PDF, and the above content is for reference

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