IXTA48P05T

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The IXTA48P05T is a type of single enhancement N-channel metal oxide semiconductor field effect transistor (MOSFET). It is commonly used in power converters, power supply, motor control and other high current applications. This MOSFET offers high level of performance and reliability due to its advanced power MOSFET technology.

The Gate Oxide Layer (GOI) of IXTA48P05T is a silicon-permeable field oxide. This layer is formed between the substrate and the gate electrode by utilizing the STI (Shallow Trench Isolation) technology. This GOI layer has a thickness of 1.2 nm and is highly durable, thus making it ideal for use in applications that require high voltage gate drive and thermal cycling performance.

The IXTA48P05T also features high current density and max gate-source voltage (Vgs), and an incredibly fast switching speed, which makes it an ideal choice for high frequency power conversion and motor control applications. It is capable of supplying currents up to 48 amps, while its maximum on-state drain-source voltage (Vds) is 5V. The maximum junction temperature of this MOSFET is 175°C, allowing for safe and reliable operation in a wide range of temperature environments.

This MOSFET also has a low on-resistance and high input/output capacitance, making it an ideal device for switching and linear regulation in inverters, converters, over-current or over-voltage protection circuits, and other power control applications. Additionally, its high reverse Body Diode (BDR) ensures a fast and soft recovery, even from high reverse voltage.

In terms of its application field, the IXTA48P05T is commonly used in various automotive, industrial and consumer electronic products. This MOSFET can be found in home appliances, electronic equipment, automotive power supply and motor control systems, as well as in power converters and power supply designs. It is also used in high-power switching applications, where high efficiency and low power losses are essential.

In terms of the IXTA48P05T\'s working principle, it utilizes the field effect principle in order to acquire its on-state and off-state operations. This transistor has two MOSFETs that form a switch with the substrate and the gate electrode. Depending on the signal from the gate, the MOSFET allows or restricts current flow from source to drain. When the gate signal is high, the MOSFET is “on” and current flows freely from the source to drain. When the gate signal is low, the MOSFET is “off” and the current is blocked.

The IXTA48P05T is the perfect choice for driving higher loads, as it has excellent thermal performance, fast switching speeds and high current carrying capacities. It is an excellent device for a wide range of switching and linear regulating applications, including over current/over voltage protection circuits, home appliances, motor control systems, power converters and power supplies.

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