| Allicdata Part #: | IXTA50N20P-ND |
| Manufacturer Part#: |
IXTA50N20P |
| Price: | $ 2.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 50A TO-263 |
| More Detail: | N-Channel 200V 50A (Tc) 360W (Tc) Surface Mount TO... |
| DataSheet: | IXTA50N20P Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 2.02142 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 360W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2720pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Series: | PolarHT™ |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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An IXTA50N20P is a transistor, specifically a Field Effect Transistor (FET) designed to control high-current, low-voltage electrical signals. It is a single junction MOSFET (metal oxide semiconductor field effect transistor) designed as a dual-gate device. It can switch power between two-loads, and it is used in areas such as industrial applications and motor control.
The IXTA50N20P is constructed in such a way that the source terminal is connected to a section of the semiconductor material. The two gate terminals are then connected to a metal oxide layer, insulated from the semiconductor material, and to an external circuit. Depending on the voltage applied to the two gate terminals, the current flows through one of two sections of the MOSFET. This flow is either through the left or the right section, depending on whether the voltage applied is positive or negative. This is the working principle of the IXTA50N20P.
The IXTA50N20P can be used in a range of applications, including driving a motor, controlling a valve via a pneumatic system, and powering up an IGBT (Insulated Gate Bipolar Transistor). It is a high power transistor that operates at a frequency from DC up to 20 KHz and is capable of driving loads up to 150 amps. The use of this transistor helps to reduce energy loss in industrial applications and can make a significant difference when the device is operated at high frequency.
The IXTA50N20P has several advantages over other FETs. It is able to handle high voltage, current and frequencies up to 20 KHz, and it is capable of providing a high degree of precision in controlling signals. Due to its dual gate design, it can easily be switched between high and low power modes. It also has a low-gate charge, which helps to reduce power consumption.
The IXTA50N20P is a versatile and reliable FET, which enables precise control of high current, low-voltage electronic signals. Its dual-gate design and low-gate charge allows it to switch power between two-loads and makes it ideal for use in applications such as motor control, industrial applications and power up an IGBT. With its ability to handle high frequencies and voltages, it can make a significant difference in energy efficiency and provide precision control in all applications.
The specific data is subject to PDF, and the above content is for reference
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IXTA50N20P Datasheet/PDF