Allicdata Part #: | IXTA8N50P-ND |
Manufacturer Part#: |
IXTA8N50P |
Price: | $ 1.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 8A D2-PAK |
More Detail: | N-Channel 500V 8A (Tc) 150W (Tc) Surface Mount TO-... |
DataSheet: | IXTA8N50P Datasheet/PDF |
Quantity: | 543 |
1 +: | $ 1.75140 |
50 +: | $ 1.41284 |
100 +: | $ 1.27153 |
500 +: | $ 0.98895 |
Vgs(th) (Max) @ Id: | 5.5V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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The IXTA8N50P is a part of the IXT family of Field Effect Transistors (FETs) manufactured by IXYS Corporation. IXYS Corporationis a leading provider of integrated power semiconductor and power switching solutions worldwide, providing cutting-edge technologies in both power efficiency and system reliability. IXTA8N50P is a single-digit surface mount transistor, with a maximum breakdown of 150V and maximum continuous drain current of 8A. It is specifically designed for power supplies and applications such as switching mode power converters and Class D amplifiers.
Field Effect Transistors (FETs) refer to a group of transistors with common characteristics, such as allowing all the current from the source to the drain only when a voltage is applied to the gate. The field-effect technology is a three-terminal switch, consisting of a source (S) terminal, a drain (D) terminal and a gate (G) terminal. The main benefit of FETs lies in their inherent input and output impedance characteristics, providing a large variety of possibilities for circuit design.
IXTA8N50P is a metal oxide semiconductor field effect transistor (MOSFET). MOSFETs are voltage-controlled devices, so the level of current passing through the drain is limited by the gate voltage. When a positive voltage is applied to the gate, it creates a strong electric field around the oxide layer, hence attracting mobile electrons into the channel. The more positive voltage applied to the gate, the more electrons are attracted and the current flowing through the drain is increased.
In terms of its working principle, IXTA8N50P MOSFET shows very high input impedance at the gate due to the metal-oxide-semiconductor structure, allowing current to flow from the drain to the source only when the gate voltage reaches a certain threshold. This voltage threshold is called the \'threshold voltage\' or V_TH, and it is usually around 2-4V for MOSFETs. Once the gate voltage reaches V_TH, the resistance between the drain and source dramatically reduces and the drain-source current increases rapidly.
IXTA8N50P devices are used in a variety of applications, such as power supplies, motor control circuits, DC-DC converters, Class D audio amplifiers, etc. They provide superior power management efficiency, increased power savings, faster switching speeds and high temperature stability than other conventional transistors, making them ideal for high-power switching applications.
In summary, IXTA8N50P is a single digit surface mount transistor manufactured by IXYS to provide superior performance and power efficiency. It is based on MOSFET technology and has a threshold voltage of 2-4V, allowing it to be used in a wide variety of applications. It is ideal for use in power supplies, motor control circuits, DC-DC converters and Class D audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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IXTA02N250 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 2500V 0.2A TO... |
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IXTA24P085T | IXYS | 1.67 $ | 981 | MOSFET P-CH 85V 24A TO-26... |
IXTA05N100 | IXYS | -- | 20 | MOSFET N-CH 1000V 0.75A T... |
IXTA8PN50P | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 8A D2-PA... |
IXTA54N30T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 54A TO-2... |
IXTA62N25T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 250V 62A TO-2... |
IXTA72N20T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 200V 72A TO-2... |
IXTA110N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 110A TO-2... |
IXTA152N085T | IXYS | -- | 1000 | MOSFET N-CH 85V 152A TO-2... |
IXTA152N085T7 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 152A TO-2... |
IXTA160N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-2... |
IXTA160N075T7 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-2... |
IXTA160N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 160A TO-2... |
IXTA180N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 180A TO-2... |
IXTA180N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 180A TO-2... |
IXTA180N085T7 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 180A TO-2... |
IXTA182N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 182A TO-2... |
IXTA182N055T7 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 182A TO-2... |
IXTA200N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 200A TO-2... |
IXTA200N075T7 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 200A TO-2... |
IXTA200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-2... |
IXTA200N085T7 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-2... |
IXTA220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-2... |
IXTA220N055T7 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-2... |
IXTA220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-2... |
IXTA220N075T7 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-2... |
IXTA240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-2... |
IXTA240N055T7 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-2... |
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