IXTA90N055T2 Allicdata Electronics
Allicdata Part #:

IXTA90N055T2-ND

Manufacturer Part#:

IXTA90N055T2

Price: $ 1.33
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 55V 90A TO-263
More Detail: N-Channel 55V 90A (Tc) 150W (Tc) Surface Mount TO-...
DataSheet: IXTA90N055T2 datasheetIXTA90N055T2 Datasheet/PDF
Quantity: 1000
50 +: $ 1.19549
Stock 1000Can Ship Immediately
$ 1.33
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2770pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: TrenchT2™
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTA90N055T2 is a potent as well as reliable type of Field Effect Transistor (FETs), which is classified under the category of single-channel MOSFETFs. Based on its specialized features, it is predominantly chosen for certain applications and is a commonly opted option by those in the industry. Besides, it is also ideal for those who are looking for the desired compatibility at affordable prices.

The IXTA90N055T2 has attained a wide range of applications in the industry due to its versatile properties and outstanding performance. It is primarily employed in power regulating, switching networks as well as other forms of electrical control equipment. But aside from its many practical uses, this FET has also been popular for being an ideal choice for computer-controlled systems, broadcast systems, and in the military.

When it comes to its working principle, the key component of the IXTA90N055T2 lies in its MOSFET, which is the main factor responsible for its effectiveness. Basically, this technology allows for the passage of current through the gate of the FET. In the meantime, it also prevents the interference of certain negative input components that may affect the operation of the device.

Another major attribute of the IXTA90N055T2 is its high switching speed, which makes it ideal for applications that call for fast and reliable switching operations. This performance feature is attributed to the efficient utilization of electron current flow in the FET circuit. To facilitate this process, the device is equipped with a gate voltage and Drain voltage monitoring circuit, which is then used to ensure accurate switching.

Aside from its features and benefits, the IXTA90N055T2 is also a cost-effective form of FET technology. Its efficient design allows it to be suitable for high-volume applications, as well as easy integration with other components. Additionally, its relatively low power consumption ensures its reliability in a wide range of settings, allowing for reliable performance 90N055T2 no matter the conditions.

To sum it all up, the IXTA90N055T2 offers a potent solution for those in the market who are looking for a reliable, versatile, and affordable FET technology that offers superior features, performance, and ease of integration. Its MOSFET-based design, wide range of applications, and cost-effectiveness make it an ideal choice for any commercial, industrial, or military project. In addition, its high switching speed and low power consumption guarantee consistent and reliable performance even in unfavorable conditions.

The specific data is subject to PDF, and the above content is for reference

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