Allicdata Part #: | IXTA96P085TTRLTR-ND |
Manufacturer Part#: |
IXTA96P085TTRL |
Price: | $ 2.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 85V 96A TO-263 |
More Detail: | P-Channel 85V 96A (Tc) 298W (Tc) Surface Mount TO-... |
DataSheet: | IXTA96P085TTRL Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.90182 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXTA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 298W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13100pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | TrenchP™ |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 48A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 96A (Tc) |
Drain to Source Voltage (Vdss): | 85V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IXTA96P085TTRL is a enhancement mode gallium nitride (GaN) transistor that focuses on low voltage and high inverting power applications. This device is widely used in switched mode converters, motor control rectification, and inverter circuits.
The IXTA96P085TTRL is a unique device tailored for advanced low voltage applications due to its low voltage capability, low conduction losses, and its fast switching speed. Its gate voltage range can go as low as 5 volts, allowing flexibility and providing higher efficiency when compared to other transistors. Its on-state resistance (RDSon) is extremely low, which leads to low conduction losses. These low conduction losses greatly enhance the efficiency and speed of the application, particularly in switched mode converters, motor control rectification, and inverter circuits.
The IXTA96P085TTRL makes use of an enhancement mode, which allows the transistor to remain in its cutoff state until the voltage at its gate is changed. This change in gate voltage allows current to start flowing from the source to the drain of the transistor. The amount of current flowing from source to the drain is controlled by the gate voltage. This design helps achieve precision voltage control and reduces power loss.
The IXTA96P085TTRL transistor is capable of handling large currents up to 19amps due to its optimized channel, as well as relatively high voltage since it can tolerate up to 100 volts. This higher voltage capability helps reduce the total number of components required in an application.
The Key down-sizing of the IXTA96P085TTRL transistor has a number of advantages. First, it increases the circuit size and reduces the time required for cooling and the time taken for design and assembly. Secondly, it also reduces the power consumption of the device due to its reduced size.
The IXTA96P085TTRL provides several advantages for low voltage and high inverting power applications. First, its high efficiency reduces the amount of heat that must be dissipated and improves the overall system efficiency. Second, its low conduction loss helps to reduce power loss and increase the speed of operation. Finally, its low gate voltage capability and high voltage handling ability allow greater system scalability and flexibility in applications.
In conclusion, the IXTA96P085TTRL is an efficient and reliable GaN transistor designed for applications requiring low voltage, high inverting power, and fast switching. This device offers a number of benefits, including high efficiency, low conduction losses, and low gate voltage, making it suitable for many applications such as switched mode converters, motor control rectification, and inverter circuits. Its key down-sizing also adds a number of advantages, such as reduced design time and power consumption.
The specific data is subject to PDF, and the above content is for reference
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