IXTA98N075T Allicdata Electronics
Allicdata Part #:

IXTA98N075T-ND

Manufacturer Part#:

IXTA98N075T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 75V 98A TO-263
More Detail: N-Channel 75V 98A (Tc) 230W (Tc) Surface Mount TO-...
DataSheet: IXTA98N075T datasheetIXTA98N075T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Rds On (Max) @ Id, Vgs: --
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 100µA
Series: --
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXTA98N075T is a N-Channel enhancement mode field effect transistor (FET), which is used in many industrial and consumer electronics applications. It is a low-voltage, high-power FET capable of supplying current up to 15 amps.

FETs are semiconductor devices that control the flow of electrical current using their electrical field. This field is created by the transfer of charge carriers, either electrons or holes. FETs are distinct from other types of transistors (such as bipolar transistors) in that they do not require the movement of charge carriers, instead the field is produced simply by the application of a voltage between its gate and source. As a result, FETs are highly efficient with minimal power consumption.

The IXTA98N075T is a specific type of FET known as an NMOSFET, which stands for N-type Metal-Oxide-Semiconductor FET. This FET is unique in that its operation is fully-enhanced; meaning that the flow of current is completely dependent on the voltage applied to the gate terminal. Unlike other FETs, it does not require “turn-on” voltage to begin conducting.

The workings of an NMOSFET are fairly straightforward. When a voltage is applied to the gate, an electric field is induced which attracts electrons towards the gate. The presence of the electrons repels the charge carriers which are present in the source and drain, thus creating a resistance. This resistance controls the current flowing through the transistor. By altering the voltage applied to the gate, the resistance can be adjusted, thereby allowing for precise control over the flow of current.

The IXTA98N075T can be used in a variety of industrial and consumer electronics applications. It is often used as an amplifier in audio circuits, a power switch in motor control systems, and a switching device in digital circuitry. It is also used in power management applications, such as charging and discharging of large batteries. Due to its semi-controlled gate behavior and small footprint, it is ideal for compact circuits.

In conclusion, the IXTA98N075T is a N-Channel enhancement mode field effect transistor used in a wide variety of industrial and consumer electronics applications. Its low-voltage, high-power capabilities and fully enhanced behavior make it an ideal choice for various switching and power management tasks. Its semi-controlled gate behavior and small footprint make it highly suited to compact circuitry and battery charging/discharging operations.

The specific data is subject to PDF, and the above content is for reference

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