IXTK102N65X2 Allicdata Electronics
Allicdata Part #:

IXTK102N65X2-ND

Manufacturer Part#:

IXTK102N65X2

Price: $ 10.98
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 650V 102A X2 TO-264
More Detail: N-Channel 650V 102A (Tc) 1040W (Tc) Through Hole T...
DataSheet: IXTK102N65X2 datasheetIXTK102N65X2 Datasheet/PDF
Quantity: 59
1 +: $ 9.97920
25 +: $ 8.39034
100 +: $ 7.71015
Stock 59Can Ship Immediately
$ 10.98
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXTK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1040W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 30 mOhm @ 51A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTK102N65X2 is a type of vertical power Field Effect Transistors (FETs) with low on-state resistance and high power efficiency. It is widely used in various applications due to its excellent features. This article will discuss the application field and working principle of IXTK102N65X2.

Application Field of IXTK102N65X2

IXTK102N65X2 is mainly utilized in power management applications. It is used in power switch applications such as AC/DC power supplies and motor drives. The device has low switching losses due to its low on-state resistance, and it can provide high efficiency for various power management applications. IXTK102N65X2 is also used in audio amplifiers and LED lighting applications due to its high current handling capability and excellent switching performance. Moreover, IXTK102N65X2 is suitable for use in high-frequency switching applications, such as DC/DC converters and high-frequency inverters.

Working Principle of IXTK102N65X2

IXTK102N65X2 is an enhancement type FET and belongs to the single MOSFET family. The single MOSFETs are basically vertically constructed FETs which have three terminals like gate, drain and source. The working of IXTK102N65X2 begins when the gate voltage is increased above the threshold voltage. This increases the conductivity of the FET since the drain current is proportional to the gate voltage. As the gate voltage is increased above the breaking voltage, the MOSFETs start to pull drain current. The current flow is then controlled by a low gate-to-drain voltage.

By controlling the gate voltage, the drain voltage and the gate-to-drain voltage can be adjusted to control the current flow and the on-state resistance. In IXTK102N65X2, the gate-to-drain voltage can be as low as 0.6V, which provides excellent switching performance and low power consumption in various applications. The device also features integrated protection features such as temperature protection and over-voltage protection which enhances the reliability of the device.

IXTK102N65X2 is an ideal solution for various power management applications due to its excellent characteristics. Its low on-state resistance and high current handling capability enables it to provide high performance in various applications. The integrated protection features also add to its reliability. Thus, IXTK102N65X2 is an efficient solution for power switch applications and power management applications.

The specific data is subject to PDF, and the above content is for reference

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