| Allicdata Part #: | IXTK120N25-ND |
| Manufacturer Part#: |
IXTK120N25 |
| Price: | $ 11.94 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 250V 120A TO-264 |
| More Detail: | N-Channel 250V 120A (Tc) 730W (Tc) Through Hole TO... |
| DataSheet: |  IXTK120N25 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 10.85660 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-264-3, TO-264AA |
| Supplier Device Package: | TO-264 (IXTK) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 730W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 360nC @ 10V |
| Series: | MegaMOS™ |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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IXTK120N25 is a N-channel MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. It is a three-terminal component with source, gate, and drain electrodes. Built with an on-type enhancement, it is a wide-gate small signal transistor designed for extremely low on-state resistance and low capacitance. This device is specifically constructed with a higher level of gate charges, making it ideal for switching applications while its tiny gate charge allows it to operate at higher frequencies. IXTK120N25 is capable of maintaining a low input capacitance and low profile regardless of the changes in load voltage.
The IXTK120N25 application field covers all kinds of electrical products, such as DC-DC converters, AC receivers, switch mode power supplies and any other device where a high-speed switching is necessary. Since this MOSFET is equipped with low on-state resistance and low capacitance, it can provide improved performance in high frequency applications.
The working principle of this N-channel MOSFET is simple. The device uses the insulating properties of the semiconductor to control the current flow in the channel. The source-gate terminal of the device acts as the gate control terminal, which when changed from ‘on’ to ‘off’ will cut-off the current flow in the channel, thus contributing to the switching ability of the device.
The device is equipped with a high voltage breakdown voltage, which keeps the current intensity limited even in extreme situations. Moreover, the IXTK120N25 is mostly immune to electrostatic discharge and has an excellent reliability rating.
In short, the IXTK120N25 is an ideal solution for high frequency applications. It is built with a level of gate charges that is capable of maintaining a low input capacitance and very low profile. The device provides a wide gate small signal transistor with low on-state resistance and low capacitance, making it a perfect choice for switching applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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