IXTK62N25 Allicdata Electronics
Allicdata Part #:

IXTK62N25-ND

Manufacturer Part#:

IXTK62N25

Price: $ 10.14
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 250V 62A TO-264
More Detail: N-Channel 250V 62A (Tc) 390W (Tc) Through Hole TO-...
DataSheet: IXTK62N25 datasheetIXTK62N25 Datasheet/PDF
Quantity: 1000
30 +: $ 9.22152
Stock 1000Can Ship Immediately
$ 10.14
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXTK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Series: MegaMOS™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction: IXTK62N25 is a N- Channel enhancement type MOSFET transistor which is produced under Fairchild semiconductor production. It is divided into three terminals (source, gate and drain) and are constructed as a single layers.

Application Field: IXTK62N25 MOSFET is widely used in different applications like switching and amplifier circuits. As it is an enhancement type which works on minimal biasing current, most of the designers prefer this transistor for the low voltage circuit applications.

It can be used in the power circuits such as power amplifier driver circuits, motor controllers, switching circuits for DC to DC converters and high gain audio amplifiers.

It is also used in Switching and amplifier applications in automobiles, automation sensors, audio amplifiers and signal amplifiers.

Working Principle: IXTK62N25 is an enhancement type MOSFET. As it is an enhancement type, it requires a constant bias current to work appropriately. It is basically a three terminal semiconductor device which has three terminals such as source, gate and drain.

In the operation of IXTK62N25, when the voltage is applied to its drain terminal, electrons start to flow from source terminal to drain terminal, making the source terminal negative relative to gate terminal. The gate terminal here works as an electric field which controls the current flow through the device.

When the voltage on the gate terminal is increased, more electrons flow from source terminal to drain terminal. If the voltage on the gate terminal is decreased, the amount of current flow decreases. This indicates that the voltage present in the gate terminal controls the current through the device.

IXTK62N25 has low on-resistance and low junction capacitance to give high speed switching operation with low power consumption. It has low power consumption and high current that makes it suitable for portable applications.

Advantages: IXTK62N25 is advantageous in several ways over other types of transistor. It is constructed as single die which makes it have small size. Furthermore, it has low on-resistance and low junction capacitance for fast switching and low power consumption. It has a wide range of applications and provides high current at low voltage. It is suitable for portable applications due to its low power consumption.

Disadvantages: IXTK62N25 is an enhancement type MOSFET. As it requires a constant bias current to work appropriately and sustain a voltage, it is only suitable for low voltage applications. It is not suitable for high voltage applications as an external source is needed to provide the bias current.

Conclusion: IXTK62N25 is an N- channel enhancement type MOSFET which is produced under Fairchild semiconductor production. It is usually used in switching and amplifier applications like power amplifier driver circuits, motor controllers, switching circuits, DC to DC converters, high gain audio amplifiers, automobiles, automation sensors, audio amplifiers and signal amplifiers. The current flows through the the device when the voltage is applied to the drain terminal and the voltage on the gate terminal controls the current flow through the device. It is suitable for portable applications due to its low power consumption and faster switching operation, but it is only suitable for low voltage applications.

The specific data is subject to PDF, and the above content is for reference

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