IXTK120N25P Allicdata Electronics
Allicdata Part #:

IXTK120N25P-ND

Manufacturer Part#:

IXTK120N25P

Price: $ 9.72
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 250V 120A TO-264
More Detail: N-Channel 250V 120A (Tc) 700W (Tc) Through Hole TO...
DataSheet: IXTK120N25P datasheetIXTK120N25P Datasheet/PDF
Quantity: 2
1 +: $ 8.83890
25 +: $ 7.24801
100 +: $ 6.54079
500 +: $ 5.48012
Stock 2Can Ship Immediately
$ 9.72
Specifications
Vgs(th) (Max) @ Id: 5V @ 500µA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXTK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 700W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Series: PolarHT™
Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTK120N25P is a single-gate Field Effect Transistor (FET) designed for use in a variety of applications including switching, signal processing, amplification, and power control. The FET is an ideal choice for amplifiers and audio devices in its sub-micron size class due to its low on-resistance, high input impedance, and high-speed switching characteristics. The device is also suitable for use as a driver in logic and digital signal processing circuits.

The IXTK120N25P is a high-performance large-signal N-channel enhancement-mode FET. It features a package size of only 8.1 sqmm, making it one of the most compact FETs available today. The device features a high-input impedance and low ON-resistance, enabling it to handle high power levels with low losses.

The IXTK120N25P is a voltage-controlled device that uses an insulated-gate field effect to control the flow of current between a source and a drain. It works by modulating an input voltage, or gate voltage, to allow a current to flow through the channel between the source and the drain. By controlling the gate voltage, the FET can be used to amplify and switch high-frequency signals with very low distortion and high reliability.

The IXTK120N25P can be used for power switching in applications such as switching power supplies and DC-DC converters. It is also suitable for use in high-frequency commutation circuits and high power amplifiers. Its rugged construction ensures reliable switching in applications up to 175V. Its low on-resistance is ideal for controlling high-power loads, as it eliminates power losses associated with voltage drops.

This high-performance device is also suitable for use in analog circuits, such as audio amplifiers and signal processors. Its wide input impedance allows it to operate with low noise and distortion in high-fidelity applications. It can also be used as a driver or buffer in logic and digital signal processing circuits.

The IXTK120N25P is a versatile, low-cost field effect transistor that can be used in a variety of applications. Its robust construction ensures reliable operation in high voltage and power applications, making it an ideal choice for a wide range of circuits. With its high-input impedance and switching speeds, it is an invaluable tool for boosting the performance of circuits.

The specific data is subject to PDF, and the above content is for reference

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