IXTK20N150

Vgs(th) (Max) @ Id:	4.5V @ 1mA
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264 (IXTK)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1250W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7800pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	215nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1 Ohm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	1500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTK20N150 Application Field and Working Principle

IXTK20N150 is a N-channel Field Effect Transistor (FET) which recently hit the market taking its place in the single family of silicon-based power MOSFETs used in modern switching applications. It is a MOSFET with a breakdown voltage of 150V, making it suitable for applications that require higher voltage levels. The IXTK20N150 has four pins, including the drain, gate, source, and bulk. It is a device from the IXYS Power MOSFET family, a leader in the market. Being a leading product, the IXTK20N150 has become popular for its applicability in various applications of modern power control devices.

IXTK20N150 Applications

The IXTK20N150 has been designed for use in various modern power control applications. It is especially useful in motor control systems as a high power switch as its N-channel FET technology allows for fast switching and is capable of handling load currents up to 24A. it is also suitable for high-frequency switching applications as its high switching speed allows it to efficiently transfer power from a low-current control circuit to a higher voltage application. Some other applications of the IXTK20N150 include use in class-D audio amplifiers, AC inverters, power supplies, solar inverters, etc.

IXTK20N150 Working Principle

The typical mode of operation of the IXTK20N150 is as a metal-oxide-semiconductor field-effect transistor (MOSFET). It is composed of four terminals: source, gate, drain, and bulk. In addition to the normal source, drain, and gate terminals, the MOSFET also has a bulk connection. To explain the IXTK20N150’s working principle, the bulk connection needs to be discussed first. The bulk serves as a terminal connected to the fundamental power input, and when applying voltage to it, the MOSFET works as a depletion-mode transistor. This depletion-mode transistor prevents current from passing through it for any value of the gate voltage. When no voltage is applied to the bulk, the device works as an enhancement-mode transistor, the current flows through it and can be controlled by varying the gate voltage. Therefore, to increase the drain-to-source current in the IXTK20N150, a gate voltage is applied which, while keeping the drain-to-source voltage constant, allows an increased number of electrons and/or holes to flow between the source and the drain. This is due to the electric field present in the device. When the gate voltage is decreased, the current flowing between the source and the drain is decreased; recall that the electric field is generated by the gate voltage. Since the channel between the source and the drain is formed by the conduction channel and the gate voltage, the MOSFET is termed as a voltage-controlled device. The IXTK20N150 also relies on the fact that electrons are very mobile in the crystal lattice structure, compared to the relatively low mobility of holes in the same lattice structure. This difference in mobility allows the drain current to remain constant across a wide range of the gate voltage. This means that the IXTK20N150 can function efficiently even at low gate voltages, which is particularly useful in modern applications. To sum up, the IXTK20N150 works as a voltage-controlled device allowing for current to flow through it when a certain gate voltage is applied to it. With its high power capability and fast switching speed, the IXTK20N150 is well suited for modern applications of power control.

Conclusion

In conclusion, the IXTK20N150 is a silicon-based N-Channel FETs and a part of the IXYS power MOSFET family. It is designed for use in applications that require high voltage levels and fast switching speeds. Its main applications include usage in DC motor control systems, power supplies, class-D audio amplifiers, AC inverters and solars inverters. It works as a voltage-controlled device, where the gate voltage applied to it controls the current flow between the source and the drain. The IXTK20N150 is a powerful and fast device that has become popular for its robust performance and applications in modern devices.

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