IXTK170N10P

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The IXTK170N10P is a N-channel MOSFET power transistor developed by IXYS Corp. It is a highly efficient and cost-effective solution for various power amplifiers, converters and switching regulators. This article examines the IXTK170N10P and provides an in-depth description of its application field and working principle.

Application field

The IXTK170N10P is designed to be used in a variety of power converter, amplifier and switching regulator applications. It is suitable for high-current applications such as motor control, power supplies and variable-speed drives. It can also be used in alternative energy applications such as solar and wind turbine power converters. It is capable of dissipating Tc=100°C with a maximum power dissipation of 15 W at a mounting base temperature of 25°C. The IXTK170N10P also features a low-on-resistance (RDS (ON)), fast switching speed, and low capacitance.

Working principle

The IXTK170N10P is an N-channel MOSFET power transistor. It works by the operation of electrons in an N-type MOSFET. An electric field is created at the interface between the source and drain terminals when a voltage is applied to the gate and the substrate. This field creates a channel in the substrate that allows electrons to flow from the source to the drain. The current flowing through the transistor is proportional to the voltage applied to the gate terminal. The IXTK170N10P has a drain-source breakdown voltage (BVDSS) of 170 V and a maximum drain current (ID) of 90 A.

The IXTK170N10P features a low on-resistance, which is important for improving efficiency. The low on-resistance decreases the amount of power loss due to transistor conduction and increases the efficiency of the circuit. The IXTK170N10P has a low gate capacitance, which allows a fast switching speed and reduces power losses due to switching. The IXTK170N10P also has an effective thermal impedance, which allows for a channel temperature of 100°C.

The IXTK170N10P is a suitable solution for various power amplifier, converter, and switching applications due to its low on-resistance, fast switching speed and low capacitance. It is a highly efficient and cost-effective solution for projects requiring a high-power and high-current carrying capacity.

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