IXTK120P20T Allicdata Electronics
Allicdata Part #:

IXTK120P20T-ND

Manufacturer Part#:

IXTK120P20T

Price: $ 14.13
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 200V 120A TO-264
More Detail: P-Channel 200V 120A (Tc) Through Hole TO-264 (IXT...
DataSheet: IXTK120P20T datasheetIXTK120P20T Datasheet/PDF
Quantity: 1000
25 +: $ 12.84620
Stock 1000Can Ship Immediately
$ 14.13
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXTK)
Mounting Type: Through Hole
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
Series: TrenchP™
Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTK120P20T is an N-channel MOSFET transistor that has been designed to perform power switching in various digital logic designs. It is one of the most popular transistors because of its low on resistance and its high input impedance, which makes it ideal for use in high frequency applications. The IXTK120P20T features a low on resistance of 120 mOhm, a low drive voltage of 4.5V, and a maximum gate threshold voltage of 20 V. These features make it ideally suited for working on applications such as DC-DC converters, power supplies, and power amplifiers.

Working Principle of the IXTK120P20T

The working principle of the IXTK120P20T is based on its operating current, which is termed as the source-drain current. When the source and drain terminals of the MOSFET transistor are connected in an integrated circuit, a current is induced in the source-drain current that is dependent on the gate voltage of the MOSFET. The gate voltage is the voltage that is applied to the gate of the transistor, and it controls the amount of current that flows through the source-drain of the transistor.

The current flow through the MOSFET is controlled by its threshold voltage, which is the voltage necessary to activate the MOSFET current. When the threshold voltage is exceeded, the current begins to flow in the MOSFET and increases with the applied voltage. This current is used to switch the output current of the circuit on and off, making the IXTK120P20T an ideal device for power switching applications.

Application Fields for the IXTK120P20T

The IXTK120P20T is ideal for many applications, as its low on resistance makes it highly efficient for a wide range of switching applications. Its low drive voltage and high input impedance also make it ideal for DC-DC converters and power amplifiers. In addition, its low input capacitance provides fast switching of signals.

The IXTK120P20T is also an ideal choice for low-power switching applications. Its low drive voltage, low on resistance, and high Breakdown Voltage (BVDSS) make it perfect for controlling loads that require small power. This makes it ideal for applications such as data acquisition systems and temperature control systems, as well as consumer electronics.

The IXTK120P20T is also highly reliable for use in a variety of logic level designs and is suitable for applications such as line driving and buffering, high-speed switching, and level translating. Its low on resistance and high input impedance also make it well suited for use in automotive applications, providing reliable power switching for on-board ECUs and other applications.

Conclusion

The IXTK120P20T is one of the most popular transistors for use in various digital logic designs. Its low on resistance, low drive voltage, and high input impedance make it highly efficient for a range of power switching and low-power switching applications. It is also reliable for use in logic level designs, automotive applications, and more. These features make the IXTK120P20T an ideal choice for many digital design applications.

The specific data is subject to PDF, and the above content is for reference

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