IXTK5N250

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264 (IXTK)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	960W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8560pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	200nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8.8 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5A (Tc)
Drain to Source Voltage (Vdss):	2500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTK5N250 Application Field and Working Principle

The IXTK5N250 is a depletion-mode n-channel Enhancement Mode Field Effect Transistor (N-E-MOSFET) manufactured by Vishay. This MOSFET has a low-voltage drive requirement and can operate on voltages as low as 1V. It is suitable for applications where the input device is powered by a single-cell battery, such as remote control systems, portable audio and video devices, automotive electronics, patient monitors and medical instruments.MOSFETs can be divided into depletion-mode and enhancement-mode depending on their threshold voltage. A depletion-mode MOSFET acts as a normally-on switch and can conduct current even when the gate voltage is below its threshold voltage. An enhancement-mode MOSFET acts as a normally-off switch, and requires a gate voltage that is higher than its threshold voltage for current to flow.The IXTK5N250 is a depletion-mode MOSFET with a maximum drain-source voltage (VDS) of 250V. It has a gate-source voltage (VGS) of -20V to 0V, and a breakdown voltage of 500V. It has a low gate-charge rating of 1.2nC and a maximum current rating of 5A.The IXTK5N250 is suitable for a variety of switching and linear applications, including:

• DC/DC step-down converters
• DC/DC buck converters
• AC/DC rectifiers
• Inverters
• General-purpose switching circuits
• Motor control circuits
• LED drivers

The IXTK5N250 device can be used in switching circuits in which the load is switched on and off according to the control signal at the gate. This MOSFET can also be used in low-voltage power supplies, DC-DC converters, motor control circuits and LED drivers. The device requires a gate voltage of up to 0V to operate, which makes it ideal for applications powered by a single-cell battery.The working principle of a MOSFET is based on the Drift-Diffusion model, which states that current flow in a semiconductor is due to the movement of charge carriers in the semiconductor. In a MOSFET, the current flow is due to the movement of electrons, or holes, from a region of higher concentration to a region of lower concentration.When the gate voltage of a MOSFET is applied, a voltage drop (or “electrostatic potential”) exists across the drain-source channel of the device. This voltage drop causes the electrons to move from the source to the drain, thus allowing current to flow from the source to the drain. The amount of current flow is dependent upon the gate voltage and the size of the drain-source channel.The IXTK5N250 has a low gate voltage requirement and is thus suitable for applications with a single-cell battery. The device can also be used in linear applications such as DC-DC converters and regulators. The device is suitable for switching and linear applications due to its low gate-charge, low voltage drive and maximum current rating of 5A.In conclusion, the IXTK5N250 is a low-voltage depletion-mode Enhancement Mode Field Effect Transistor manufactured by Vishay. It has a maximum drain-source voltage rating of 250V, a maximum current rating of 5A and a low gate charge. It is suitable for applications with a single-cell battery, and can be used in a variety of switching and linear applications.

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