IXTK180N15

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The IXTK180N15 is a single, high-voltage, low-threshold enhancement-mode MOSFET (metal-oxide semiconductor field-effect transistor) that is utilized for a wide range of application fields. The device is well-suited for operating in data processing, consumer, and commercial applications, among others.

MOSFETs are typically used as switches or amplifiers in electric circuits because they are uniquely capable of providing a variety of functionality based on their design. The IXTK180N15, in particular, can provide high-quality performance in a variety of levels of power control, including in automotive, consumer, and industrial applications.

The IXTK180N15 can operate in both low- and high-power levels and can provide a precise level of control as needed. Moreover, it supports low-voltage circuitry and can operate with a threshold voltage as low as 6V. This low threshold voltage is ideal for high-voltage applications, such as in automotive and power applications.

The IXTK180N15 is an ideal choice for a wide range of applications, from communicating to data processing, because it offers an excellent level of performance at a low cost. Furthermore, the device has a maximum drain-source voltage (Vdss) of 250V, which makes it suitable for a variety of operating voltages. Additionally, the device features a low on-state resistance (Rds) of approximately 2.5 mOhm and a maximum current rating of 30A, offering excellent power control and efficiency.

The IXTK180N15 integrates the advanced PowerTrench MOSFET process, designed to provide the highest levels of performance and efficiency. The device is assembled with a wide range of low-resistance lead frames and molded packages and is compatible with a wide range of flows and designs. This provides the user with a wide range of options for integration into different circuits.

In terms of electrical characteristics, the IXTK180N15 features a low threshold voltage and a high-frequency response. Additionally, the device offers a unique combination of high-drain-source breakdown voltage, high-drain-source on resistance, and low reverse-transfer capacitance. This makes it the ideal choice for applications that require high power with low noise.

The IXTK180N15 is designed to operate at low voltage and can provide stable current, making it the perfect choice for applications that require high power with low noise. Moreover, it is designed to handle high peak current and can provide extended temperature range operation, making it suitable for a wide range of operational requirements. Finally, the device is compliant with all popular industry specifications, including JEDEC and AEC Q200.

In terms of its working principle, the IXTK180N15 uses its unique design to modify the electric fields and currents between its source and drain. When a voltage is applied to a gate that is insulated from the drain and source, it creates a field in the channel region of the MOSFET. This field, in turn, modifies the number of charge carriers from the source to the drain and thus allowing the current to flow from the source to the drain through a channel.

The source voltage is regulated by the gate voltage and is directly dependent on the magnitude of applied voltage. A low threshold gate voltage is beneficial when a device is required to operate at low voltage. Furthermore, the IXTK180N15 gate threshold voltage is set to a low of 6V, making it ideal for a wide range of low-voltage applications.

The IXTK180N15 is an essential device in a wide range of applications, offering excellent performance and low power consumption. It offers a wide range of benefits and features, including a high-frequency response, low threshold voltage, and high-drain-source breakdown voltage. This makes it the perfect choice for a wide range of applications, from automotive to consumer and commercial.

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