Allicdata Part #: | IXTK550N055T2-ND |
Manufacturer Part#: |
IXTK550N055T2 |
Price: | $ 11.80 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 550A TO-264 |
More Detail: | N-Channel 55V 550A (Tc) 1250W (Tc) Through Hole TO... |
DataSheet: | IXTK550N055T2 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 10.72260 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 (IXTK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 40000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 595nC @ 10V |
Series: | FRFET®, SupreMOS® |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 550A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTK550N055T2 is a single-channel, enhancement-mode Gallium Nitride (GaN) high electron mobility transistor (HEMT) from IXYS. This device is part of the IXYS-GaN™ product family, which incorporates a number of advanced features across the range of accessible power levels.
Application Field of IXTK550N055T2
The IXTK550N055T2 is suitable for a wide range of applications, including those requiring high efficiency, high power, and compact design. It can be used in power amplifier designs as well as in various high-performance switching applications. Due to its low on-state resistance, this device is ideal for power management and voltage correctional circuits, such as pulse width modulation (PWM) converters with improved efficiency and minimal power losses.
Some of the key applications for the IXTK550N055T2 include:
- High-performance DC/DC converters for notebook computers and servers
- High-power motor drives and controls
- High-efficiency solar inverters
- High-power telecom base station power amplifiers and control
- High-power RF amplifiers
Working Principle of IXTK550N055T2
The working principle of the IXTK550N055T2 is based on GaN HEMT technology. It is a unique type of transistor in which a channel layer of a special semiconductor material, called GaN (Gallium Nitride) is used. This type of transistor provides very low on-state resistance, enabling rapid switching and very high efficiency.
The device is constructed with a planar enhanced structure, which is one of the most efficient ways of utilizing the properties of GaN. It makes use of a layer of GaN as the main active layer, and utilizes planar gate electrodes for controlling the current flowing between the drain and the source. This device also employs a new gate shape that ensures high performance and the stable operation of the transistor.
The IXTK550N055T2 is a very efficient device and can be used in a wide range of power management applications. The low on-state resistance reduces the power losses and improves the overall efficiency of the system. It can also operate at very high switching frequencies, enabling fast and precise power management in a variety of applications.
Conclusion
The IXTK550N055T2 is a single-channel, enhancement-mode Gallium Nitride (GaN) high electron mobility transistor (HEMT) from IXYS. It is suitable for a wide range of applications, such as high-performance DC/DC converters, motor drives, telecom base station power amplifiers, and RF amplifiers. This device is based on GaN HEMT technology, which provides very low on-state resistance for fast switching and high efficiency. It is an ideal choice for power management and voltage correctional circuits, as it has a low on-state resistance, which reduces power losses and improves system efficiency.
The specific data is subject to PDF, and the above content is for reference
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IXTK240N075L2 | IXYS | 16.9 $ | 1000 | MOSFET N-CHN-Channel 75V ... |
IXTK21N100 | IXYS | -- | 1000 | MOSFET N-CH 1000V 21A TO-... |
IXTK17N120L | IXYS | 22.46 $ | 1000 | MOSFET N-CH 1200V 17A TO-... |
IXTK22N100L | IXYS | -- | 1000 | MOSFET N-CH 1000V 22A TO-... |
IXTK46N50L | IXYS | 22.61 $ | 1000 | MOSFET N-CH 500V 46A TO-2... |
IXTK20N150 | IXYS | -- | 1000 | MOSFET N-CH 1500V 20A TO-... |
IXTK250N10 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 250A TO-... |
IXTK140N30P | IXYS | 13.73 $ | 175 | MOSFET N-CH 300V 140A TO-... |
IXTK8N150L | IXYS | 24.28 $ | 660 | MOSFET N-CH 1500V 8A TO-2... |
IXTK40P50P | IXYS | 12.45 $ | 389 | MOSFET P-CH 500V 40A TO-2... |
IXTK90P20P | IXYS | 12.45 $ | 148 | MOSFET P-CH 200V 90A TO-2... |
IXTK75N30 | IXYS | 9.0 $ | 1000 | MOSFET N-CH 300V 75A TO-2... |
IXTK62N25 | IXYS | 10.14 $ | 1000 | MOSFET N-CH 250V 62A TO-2... |
IXTK32P60P | IXYS | 10.47 $ | 1000 | MOSFET P-CH 600V 32A TO-2... |
IXTK90N15 | IXYS | 11.17 $ | 1000 | MOSFET N-CH 150V 90A TO-2... |
IXTK550N055T2 | IXYS | 11.8 $ | 1000 | MOSFET N-CH 55V 550A TO-2... |
IXTK600N04T2 | IXYS | 11.8 $ | 1000 | MOSFET N-CH 40V 600A TO-2... |
IXTK120N25 | IXYS | 11.94 $ | 1000 | MOSFET N-CH 250V 120A TO-... |
IXTK180N15 | IXYS | 11.94 $ | 1000 | MOSFET N-CH 150V 180A TO-... |
IXTK160N20 | IXYS | 12.38 $ | 1000 | MOSFET N-CH 200V 160A TO-... |
IXTK33N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 33A TO-2... |
IXTK110N30 | IXYS | 13.21 $ | 1000 | MOSFET N-CH 300V 110A TO-... |
IXTK120N65X2 | IXYS | 14.16 $ | 70 | MOSFET N-CH 650V 120A TO-... |
IXTK180N15P | IXYS | 8.79 $ | 1349 | MOSFET N-CH 150V 180A TO-... |
IXTK170P10P | IXYS | 12.45 $ | 514 | MOSFET P-CH 100V 170A TO-... |
IXTK90N25L2 | IXYS | -- | 237 | MOSFET N-CH 250V 90A TO-2... |
IXTK60N50L2 | IXYS | 20.49 $ | 1288 | MOSFET N-CH 500V 60A TO-2... |
IXTK200N10L2 | IXYS | -- | 253 | MOSFET N-CH 100V 200A TO-... |
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IXTK82N25P | IXYS | -- | 1000 | MOSFET N-CH 250V 82A TO-2... |
IXTK170N10P | IXYS | -- | 1000 | MOSFET N-CH 100V 170A TO-... |
IXTK100N25P | IXYS | 6.64 $ | 1000 | MOSFET N-CH 250V 100A TO-... |
IXTK120N20P | IXYS | 6.64 $ | 1000 | MOSFET N-CH 200V 120A TO-... |
IXTK150N15P | IXYS | 6.64 $ | 1000 | MOSFET N-CH 150V 150A TO-... |
IXTK88N30P | IXYS | 6.64 $ | 1000 | MOSFET N-CH 300V 88A TO-2... |
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