IXTK600N04T2 Allicdata Electronics
Allicdata Part #:

IXTK600N04T2-ND

Manufacturer Part#:

IXTK600N04T2

Price: $ 11.80
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 40V 600A TO-264
More Detail: N-Channel 40V 600A (Tc) 1250W (Tc) Through Hole TO...
DataSheet: IXTK600N04T2 datasheetIXTK600N04T2 Datasheet/PDF
Quantity: 1000
25 +: $ 10.72260
Stock 1000Can Ship Immediately
$ 11.8
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXTK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V
Series: FRFET®, SupreMOS®
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTK600N04T2 Application Field and Working Principle

The IXTK600N04T2 is a power MOSFET specifically designed for use in a wide range of electronic applications, such as motor controls, power supplies, and HVAC systems. The device is constructed using a single 250V silicon N-Channel MOSFET with a maximum continuous drain current rating of 65A and a maximum pulse drain current rating of 265A. It is characterized by low on-state resistance, fast switching speed, low gate charge, and low capacitance.

A MOSFET is an insulated-gate Field Effect Transistor with a field-controlled drain-source conducting channel between its source and drain electrodes. It operates by controlling a voltage applied to its gate terminal, which influences the conductivity of the channel between the source and drain. In the IXTK600N04T2, the gate has an insulated gate, thereby making it a "floating gate", meaning the voltage applied to the gate does not have to be supplied from an external source and does not draw current.

The IXTK600N04T2 serves as a switch and it is a suitable replacement for mechanical relays, and it has the advantages of being fast and using low power. It has a high input impedance, making it less sensitive to noise. The low gate-to-drain capacitance makes it ideal for use in high-frequency applications.

When applying the IXTK600N04T2 in an application, the gate voltage must be a positive voltage with respect to the source terminal and must not exceed the maximum voltage rating (VGS, Max), with the negative voltage rating (VGS, Max) usually in the range of -2V to -20V, depending on the specific device.

When the gate voltage at VGS is within these figures, the device is in the "off" state. Applying a relatively small current to its gate allows the device to enter the "on" state and draw a current from the source. It should be noted that the IXTK600N04T2 should be used in applications that require a low on-state resistance (RDS,On) because it has a very low on-state resistance (RDS,On ≈ 0.0045Ω).

The IXTK600N04T2 is used in a variety of electronic applications and it serves as an ideal replacement for mechanical relays. Its low on-state resistance, fast switching speed, low gate charge and low capacitance make it an excellent choice for applications that require high-efficiency switching. It is also suitable for applications that involve complex power management systems due to its ease of use and its high input impedance.

The specific data is subject to PDF, and the above content is for reference

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