Allicdata Part #: | IXTK120N20P-ND |
Manufacturer Part#: |
IXTK120N20P |
Price: | $ 6.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 120A TO-264 |
More Detail: | N-Channel 200V 120A (Tc) 714W (Tc) Through Hole TO... |
DataSheet: | IXTK120N20P Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 5.97064 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 (IXTK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 714W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 152nC @ 10V |
Series: | PolarHT™ |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTK120N20P is a single N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor is an advanced form of FET (Field Effect Transistor) and is able to accurately control the operation of a circuit by simply modulating the input signal given to it. The IXTK120N20P is a 200V N-Channel MOSFET, designed for power switching applications.
MOSFETs, often referred to as VMOSFETs (Virtual MOSFETs), are a type of transistor that makes use of an insulated Gate to control the flow of electric current between two terminals (source and drain) in a circuit. The Gate of a MOSFET is insulated from the rest of the transistor, meaning that it can easily and accurately control the amount of current flowing through it. This makes MOSFETs extremely useful in a wide variety of applications.
The IXTK120N20P is specifically designed for high power switching applications. It has a maximum drain-source voltage (Vds) of 200V with a continuous drain current (Id) of 10A. The device can also handle a pulse of drain-source current (Id) of up to 20A, making it suitable for controlling large and heavy loads in power switching applications. Additionally, the IXTK120N20P features low gate-source capacitance (Cgs) and low gate charge (Qg). This makes it an ideal choice for applications that require fast switching speeds.
The working principle of the IXTK120N20P is simple but effective. When an input voltage is applied to the Gate, an electric field is generated which causes a “channel” to form between the source and drain of the transistor. This channel allows electric current to flow from the source to the drain, effectively controlling the operation of the circuit.
In conclusion, the IXTK120N20P is a high quality single N-Channel MOSFET that is designed for high power switching applications. It has a maximum drain-source voltage of 200V and is able to handle up to 20A of continuous drain-source current. Additionally, it features low gate-source capacitance and gate charge, making it an ideal choice for fast switching applications. The working principle of the IXTK120N20P is based on the generation of an electric field in the Gate which induces a “channel” to form between the source and drain, allowing electric current to flow through.
The specific data is subject to PDF, and the above content is for reference
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