Allicdata Part #: | IXTK8N150L-ND |
Manufacturer Part#: |
IXTK8N150L |
Price: | $ 24.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1500V 8A TO-264 |
More Detail: | N-Channel 1500V 8A (Tc) 700W (Tc) Through Hole TO-... |
DataSheet: | IXTK8N150L Datasheet/PDF |
Quantity: | 660 |
1 +: | $ 22.06890 |
25 +: | $ 18.75810 |
100 +: | $ 17.43390 |
Vgs(th) (Max) @ Id: | 8V @ 250µA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 (IXTK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 700W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 15V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 4A, 20V |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 1500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTK8N150L transistor is a low-power, high-performance FET (Field Effect Transistor) device and is one of the most commonly used components in digital and analog circuits. This highly efficient and reliable FET is suitable for signal and power amplifying applications and is available in both through-hole and surface mount package varieties. It is typically used in a variety of industrial, consumer, and automotive applications, such as power supplies, audio amplifiers, switching power systems, and automotive engine control.
A field-effect transistor (FET) is an electronic device consisting of a semiconductor material with at least three terminals for connection to circuits. It also has a gate, which is the control terminal that is used to modulate the width of the channel created between the source and drain. FETs are available in two primary types: bipolar transistors and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). The IXTK8N150L is a single MOSFET device, which is an enhancement-mode FET.
The working principle of the IXTK8N150L is based on the gate-source voltage (VGS) controlling the channel between the source and drain. When the gate-source voltage is positive, the channel length is increased and a larger current is allowed to flow through the channel. The gate-source voltage also controls the “On” resistance of the device which is dependent on the channel width and is usually expressed in Ohms (Ω). As the current flows through the device, the drain-source voltage (VDS) also increases, resulting in a voltage drop.
In order to protect the devices from over-voltage, the IXTK8N150L has an extended drain-source breakdown voltage (BVDSS) rating of 150V. This voltage rating allows for a large range of input and output voltages for the device. The device also has a maximum drain-source on-resistance of 0.460Ω (Ohms) which allows for very efficient current flow.
The IXTK8N150L is a versatile and reliable device, with a high voltage rating and low on-resistance that makes it suitable for a number of circuit designs. It is a common choice for applications such as switching power systems, audio amplifiers, and automotive engine control, due to its efficient current flow and protection from over-voltage. Furthermore, its high performance and low power consumption make it suitable for battery-powered applications. Thus, it is an excellent choice when designing circuits for high speed, low power, and high efficiency.
The specific data is subject to PDF, and the above content is for reference
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IXTK32P60P | IXYS | 10.47 $ | 1000 | MOSFET P-CH 600V 32A TO-2... |
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IXTK600N04T2 | IXYS | 11.8 $ | 1000 | MOSFET N-CH 40V 600A TO-2... |
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IXTK180N15 | IXYS | 11.94 $ | 1000 | MOSFET N-CH 150V 180A TO-... |
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IXTK60N50L2 | IXYS | 20.49 $ | 1288 | MOSFET N-CH 500V 60A TO-2... |
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